Results 31 to 40 of about 66,562 (152)

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

Nanoscale Research Letters, 2020
In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced.
Shupeng Chen, Shulong Wang, Hongxia Liu, Tao Han, Haiwu Xie, Chen Chong   +5 more
doaj   +1 more source

Room‐temperature quantum cascade laser packaged module at ∼8 μm designed for high‐frequency response

Electronics Letters, 2021
A high‐speed, room‐temperature quantum cascade laser packaged module emitting at 8.14 μm is presented. The cavity length of the laser is as small as 0.5 mm, and the threshold current at 298 K is 110 mA.
Ke Yang, Junqi Liu, Shenqiang Zhai, Jinchuan Zhang, Ning Zhuo, Lijun Wang, Shuman Liu, Fengqi Liu   +7 more
doaj   +1 more source

Generating structures in the form of GIS with micromechanics elements

Технологія та конструювання в електронній апаратурі, 2004
The possibility of using micromechanical tuning elements in the creation of generating structures based on Gunn diodes (GD) has been demonstrated.
V. I. Yurchenko, S. D. Votoropin
doaj  

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

Nanoscale Research Letters, 2017
La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing ...
Xing Wang, Hongxia Liu, Lu Zhao, Chenxi Fei, Xingyao Feng, Shupeng Chen, Yongte Wang   +6 more
doaj   +1 more source

Moisture-Resistant Scalable Ambient-Air Crystallization of Perovskite Films via Self-Buffered Molecular Migration Strategy

Nano-Micro Letters
Highlights A self-buffered molecular migration strategy is developed to suppress spontaneous intermolecular exchange between perovskite intermediate phase and ambient moisture.
Mei Yang, Weidong Zhu, Laijun Liang, Wenming Chai, Xiaomeng Wu, Zeyang Ren, Long Zhou, Dazheng Chen, He Xi, Chunfu Zhang, Jincheng Zhang, Yue Hao   +11 more
doaj   +1 more source

Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

Scientific Reports, 2017
In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga1−x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium
Guijuan Zhao, Huijie Li, Lianshan Wang, Yulin Meng, Zesheng Ji, Fangzheng Li, Hongyuan Wei, Shaoyan Yang, Zhanguo Wang   +8 more
doaj   +1 more source

Fabrication and characterization of highly responsive hydrogen sensor based on Fe2O3:ZnO nanostructured thin film

Measurement: Sensors
This work aimed to manufacture a highly sensitive hydrogen gas sensor based on Fe2O3:ZnO thin film. The Fe2O3:ZnO based sputtering target was synthesized by a solid-state synthesis method.
Mikayel Aleksanyan, Artak Sayunts, Gevorg Shahkhatuni, Zarine Simonyan, Gohar Shahnazaryan, Vladimir Aroutiounian   +5 more
doaj   +1 more source

Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor

Nanoscale Research Letters, 2018
In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET ...
Shupeng Chen, Hongxia Liu, Shulong Wang, Wei Li, Xing Wang, Lu Zhao   +5 more
doaj   +1 more source

Simulation Study on the Instability of Microscopic Columnar Structures in TiN Coatings Prepared by Magnetron Sputtering

Inorganics
To clarify the instability behavior of the columnar microstructure in RF magnetron sputtered TiN coatings under compressive loading, experimental characterization and finite element simulation were combined to investigate the microstructural features ...
Youqing Wang, Tiantian Yang, Minghui Liu, Xilin Xu, Furong Hou, Renqianzhuoma, Linjuan Yang, Xiangyi Guan, Huixia Liao, Ying Xiang   +9 more
doaj   +1 more source

Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation

Crystals
Thermal accumulation under high output power densities is one of the most significant challenges for GaN power devices. Diamond, with its ultra-high thermal conductivity, offers great potential for improving heat dissipation in high-power GaN devices. In
Yu Fu, Songyuan Song, Zeyang Ren, Liaoliang Zhu, Jinfeng Zhang, Kai Su, Junfei Chen, Tao Zhang, Weidong Zhu, Junpeng Li, Weidong Man, Yue Hao, Jincheng Zhang   +12 more
doaj   +1 more source