Results 181 to 190 of about 1,982,092 (286)

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential. [PDF]

Materials (Basel)
Wostatek T, Chirala VYMR, Stoddard N, Civas EN, Pimputkar S, Schimmel S.   +5 more
europepmc   +1 more source

Metrology for the next generation of semiconductor devices. [PDF]

Nat Electron, 2018
Orji NG, Badaroglu M, Barnes BM, Beitia C, Bunday BD, Celano U, Kline RJ, Neisser M, Obeng Y, Vladar AE.   +9 more
europepmc   +1 more source

Energetic Offset in Organic Solar Cells‐ Importance, Confusion and Outlook

Advanced Materials, EarlyView.
Energetic offsets in organic solar cells (OSCs) remain a subject of debate due to measurement‐ and lab‐dependent discrepancies. This Perspective clarifies the physical origins of these variations and identifies temperature‐dependent electro‐optical methods as a reliable approach to obtain consistent offset values.
Nakul Jain, Xian'e Li, Mats Fahlman, Olle Inganäs, Koen Vandewal, Feng Gao   +5 more
wiley   +1 more source

Erratum: Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications [Corrigendum]. [PDF]

Int J Nanomedicine, 2020
europepmc   +1 more source

Limits to the Hall Effect and Other Nonreciprocal Effects in Three‐Dimensional Metamaterials

Advanced Materials, EarlyView.
Comprehensive and fundamental bounds on nonreciprocal effects in three‐dimensional metamaterials are derived. They reveal that the effective Hall mobility cannot exceed the largest constituent mobility, that, under certain conditions, the Verdet constant cannot be enhanced, and that, for constituents with Hall coefficients of the same sign, the largest
Christian Kern, Graeme W. Milton
wiley   +1 more source

Role of the Recombination Zone in Organic Light‐Emitting Devices

Advanced Materials, EarlyView.
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley   +1 more source

A design TCADAS tool for semiconductor devices and case study of 65 nm conventional floating-gate MOS transistor. [PDF]

Heliyon
Dang Cong T, Hoang T.
europepmc   +1 more source

On the Stability of Permanent Electrochemical Doping of Quantum Dot, Fullerene, and Conductive Polymer Films in Frozen Electrolytes for Use in Semiconductor Devices. [PDF]

ACS Appl Nano Mater, 2019
Gudjonsdottir S, van der Stam W, Koopman C, Kwakkenbos B, Evers WH, Houtepen AJ.   +5 more
europepmc   +1 more source

Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

Advanced Materials, EarlyView.
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng, Peng Zhang, Gang Qiu, Ting‐Hsun Yang, Chang Niu, Yaochen Li, Wenqiang Cui, Yang Feng, Peide D. Ye, Ke He, Kai Chang, Kang L. Wang   +11 more
wiley   +1 more source

Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications.

Int J Nanomedicine, 2020
Dai M, Wu Z, Qi S, Huo C, Zhang Q, Zhang X, Webster TJ, Zhang H.   +7 more
europepmc   +1 more source