Results 81 to 90 of about 1,982,092 (286)

Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

Scientific Reports, 2017
In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga1−x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium
Guijuan Zhao, Huijie Li, Lianshan Wang, Yulin Meng, Zesheng Ji, Fangzheng Li, Hongyuan Wei, Shaoyan Yang, Zhanguo Wang   +8 more
doaj   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Industrial application of atom probe tomography to semiconductor devices

, 2018
Advanced semiconductor devices offer a metrology challenge due to their small feature size, diverse composition and intricate structure. Atom probe tomography (APT) is an emerging technique that provides 3D compositional analysis at the atomic-scale; as ...
Giddings, A.D., Yeoh, W.K., Shimizu, Yasuo, Alexander Devin Giddings, Yasuo Shimizu, Shimizu, Y., Wilfried Vandervorst, Estivill, R., Yeoh, Wai Kong, Sebastian Koelling, Vandervorst, W., Inoue, K., Giddings, AD Devin, Koji Inoue, Kölling, S Sebastian, Estivill, Robert, Vandervorst, Wilfried, Robert Estivill, Wai Kong Yeoh, Inoue, Koji, Koelling, S.   +20 more
core   +1 more source

Semiconducting Polymers Post‐Functionalized With Ureido‐Pyrimidinone for Robust Stretchable Transistors

Advanced Functional Materials, EarlyView.
The design of intrinsically robust stretchable semiconducting polymers was achieved through OTBS‐mediated post‐functionalization of PDPP2T side chains with UPy units, generating dual hydrogen‐bonding motifs comprising weaker urethane linkages and strong quadruple UPy interactions along the long alkyl side chain, which is crucial for achieving desirable
Dinda Bazliah, Livy Laysandra, Kosuke Terayama, Xingyu Yang, Atsushi Isobe, Tai‐Chin Chiang, Tsuyoshi Michinobu, Yu‐Cheng Chiu   +7 more
wiley   +1 more source

Simulation Study on the Instability of Microscopic Columnar Structures in TiN Coatings Prepared by Magnetron Sputtering

Inorganics
To clarify the instability behavior of the columnar microstructure in RF magnetron sputtered TiN coatings under compressive loading, experimental characterization and finite element simulation were combined to investigate the microstructural features ...
Youqing Wang, Tiantian Yang, Minghui Liu, Xilin Xu, Furong Hou, Renqianzhuoma, Linjuan Yang, Xiangyi Guan, Huixia Liao, Ying Xiang   +9 more
doaj   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Active semiconductor fibers and devices

Unary and compound semiconductors have been deposited into microstructured optical fibers to make junction-based fiber devices, very high power infrared fibers, mid-infrared fiber lasers, and nonlinear hydrogenated amorphous silicon ...
Peacock, A.C., Sparks, J., He, R., Gopalan, V., Healy, N., Mehta, P., Badding, J.V.   +6 more
core   +1 more source

Fabrication and characterization of highly responsive hydrogen sensor based on Fe2O3:ZnO nanostructured thin film

Measurement: Sensors
This work aimed to manufacture a highly sensitive hydrogen gas sensor based on Fe2O3:ZnO thin film. The Fe2O3:ZnO based sputtering target was synthesized by a solid-state synthesis method.
Mikayel Aleksanyan, Artak Sayunts, Gevorg Shahkhatuni, Zarine Simonyan, Gohar Shahnazaryan, Vladimir Aroutiounian   +5 more
doaj   +1 more source

Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor

Nanoscale Research Letters, 2018
In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET ...
Shupeng Chen, Hongxia Liu, Shulong Wang, Wei Li, Xing Wang, Lu Zhao   +5 more
doaj   +1 more source

Bio‐Derived Polyelectrolyte Additive–Induced Interfacial Ion‐Diffusion Barriers for Nonvolatile Organic Artificial Synapses

Advanced Functional Materials, EarlyView.
Sodium alginate regulates interfacial ion transport and retention in electrolyte‐gated synaptic transistors. The carboxylate‐rich polymeric network forms a dynamic interfacial ion‐diffusion barrier that facilitates ion injection during programming while suppressing ion back‐diffusion, thereby stabilizing the electrochemically doped channel state.
Chaeyeon Han, Donghwa Lee, Hyeonse Kim, Hyoik Jang, Sein Chung, Geun Yeol Bae, Eunho Lee   +6 more
wiley   +1 more source