Results 141 to 150 of about 1,982,092 (286)
A triplet‐blocking layer controls triplet exciton dynamics in blue upconversion OLEDs. The layer keeps charge transfer (CT)‐generated triplet excitons inside the triplet‐triplet annihilation (TTA) host, suppresses anode‐side interfacial quenching, and increases the steady‐state triplet population.
Qing‐Jun Shui +5 more
wiley +1 more source
Eu‐doped {ZnCdO/ZnO} structures grown on Si are developed, showcasing dual‐functionality controlled by europium doping. While high europium concentration transforms the device into an ultrafast, self‐powered photodetector, low‐doped structures can be used as an optoelectronic synapse.
Igor Perlikowski +3 more
wiley +1 more source
Liquid–liquid interface assembly enables the fabrication of solution‐processed MoS2 and WSe2 centimeter‐scale, nanometer‐thick type‐II heterostructures on paper. Interfacial charge separation and hopping‐limited recombination produce rectification and persistent photocharge retention at zero bias.
Aniello Pelella +11 more
wiley +1 more source
Packaging-Aware EMC for 2.5D/3D Semiconductor Devices with Key-Point Radiated Checks
Background: Electromagnetic compatibility (EMC) challenges in 2.5D/3D semiconductor packaging arise from the complex coupling between device, interposer, board, and cable domains, which are insufficiently captured by conventional board-level analysis ...
Lv Xin, Wang Yeliang
core +1 more source
Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee +21 more
wiley +1 more source
ABSTRACT Neat films of organic dyes are an interesting technological platform for solar cells and photodetectors. Recently, the conventional biphasic bulk‐heterojunction paradigm for photoinduced charge separation was challenged by the observation that charge carriers can be photogenerated in single‐component materials. A comprehensive experimental and
Davide Giavazzi +12 more
wiley +1 more source
Amphoteric Cu‐Doping Leading to High Thermoelectric Performance in p‐Type Bismuth Antimony Telluride
This study shows that Cu plays two opposite roles in p‐type Bi0.5Sb1.5Te3 depending on the processing route. Under thermodynamic‐equilibrium bulk‐synthesis, Cu mainly occupies cation sites, increases hole concentration, preserves mobility, and slightly reduces lattice heat transport. The best‐performing composition among the investigated series reaches
Moritz Thiem +15 more
wiley +1 more source
Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications [Retraction]. [PDF]
europepmc +1 more source
Simulation of THz Oscillations in Semiconductor Devices Based on Balance Equations. [PDF]
Linn T +3 more
europepmc +1 more source
A removable sacrificial polymer layer engineers the thermal boundary condition during nanosecond laser ablation of PET, suppressing heat‐affected‐zone formation without relying on costly ultrafast lasers. This strategy enables deep, high‐aspect‐ratio trenches with no detectable heat‐affected zone, templating silver‐filled mesh electrodes with record ...
Mehdi Zarei +3 more
wiley +1 more source

