Results 121 to 130 of about 1,981,708 (286)

Delamination of Plasticized Devices in Dynamic Service Environments

open access: yes
With the continuous development of advanced packaging technology in heterogeneous semiconductor integration, the delamination failure problem in a dynamic service environment has gradually become a key factor limiting the reliability of packaging devices.
Wenchao Tian   +4 more
core   +1 more source

Progress in group III nitride semiconductor electronic devices

open access: yes, 2012
Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the ...
Zhang, Jinfeng   +3 more
core   +1 more source

Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

open access: yesAdvanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar   +9 more
wiley   +1 more source

Anisotropic Phonon Dynamics and Directional Transport in Actinide Van der Waals Semiconductor Uranium Triselenide

open access: yesAdvanced Functional Materials, EarlyView.
USe3 is introduced as an actinide van der Waals semiconductor that mirrors the quasi‐one‐dimensional physics of transition‐metal trichalcogenides. Polarization‐resolved Raman spectroscopy on exfoliated flakes maps strong in‐plane phonon anisotropy and strain‐tunable mode shifts.
Aljoscha Söll   +17 more
wiley   +1 more source

Enhanced Ferroelectric Phase Formation via Local Structure Modification in the Pre‐Crystalline State of Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam   +18 more
wiley   +1 more source

Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices

open access: yes, 2009
Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials ...

core  

High UV sensitivity in graphene-silicon Schottky photodiodes in industry standard packaging

open access: yesnpj 2D Materials and Applications
Graphene is of great scientific and commercial interest due to its unique physical properties, including exceptionally high carrier mobility and light transparency over a wide wavelength range.
Ardeshir Esteki   +4 more
doaj   +1 more source

Advances in Solution‐Processed Textile Triboelectric Nanogenerators: Ink Formation, Processing Strategies, Applications, and Challenges

open access: yesAdvanced Functional Materials, EarlyView.
Advanced ink systems for solution‐processed textile triboelectric nanogenerators are systematically summarized, spanning conductive, tribo‐negative, and tribo‐positive layers. By connecting ink chemistry, deposition methods, and device function, the present review reveals the key governing principles of solution development and highlights practical ...
Xinlong Sun, Stephen Beeby
wiley   +1 more source

Reducing Interface Resistance in Semiconductor System Through the Integration of Graphene

open access: yes
In the quest to improve overall semiconductor system performance as scaling down continues, reducing resistance in interconnects and bonding interfaces has become a critical focus. This study explores the use of graphene, a highly conductive 2D material,
Tae Yeong Hong   +2 more
core   +1 more source

Spectral characterisation of variable reactance devices [PDF]

open access: yes, 1987
Low Noise Figure communication receivers require more efficient frequency converters. Frequency conversion and multiplication processes cannot take place without the existence of harmonics in the system and the inherent property of a nonlinear element is
Fifa, Ekaterini
core  

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