Results 131 to 140 of about 242,280 (338)

A New Approach for Sensitive Characterization of Semiconductor Laser Beams Using Metal-Semiconductor Thermocouples. [PDF]

Sensors (Basel), 2022
Piotrowska AK, Łaszcz A, Zaborowski M, Broda A, Szmigiel D.   +4 more
europepmc   +1 more source

Three‐dimensional Antimony Sulfide Based Flat Optics

Advanced Functional Materials, EarlyView.
This work presents the development of a grayscale electron beam lithography (g‐EBL) method for fabricating antimony trisulfide (Sb2S3) nanostructures with customizable 3D profiles. The refractive index of g‐EBL patterned Sb2S3 is determined based on the synergy of genetic algorithm and transfer matrix method.
Wei Wang, Uwe Hübner, Anne Gärtner, Tao Chen, Joseph Köbel, Franka Jahn, Daniel Repp, Abhrodeep Dey, Henrik Schneidwind, Andrea Dellith, Jan Dellith, Torsten Wieduwilt, Matthias Zeisberger, Tanveer Ahmed Shaik, Astrid Bingel, Markus A. Schmidt, Jer‐Shing Huang, Ulf Peschel, Volker Deckert   +18 more
wiley   +1 more source

Simulation of a ridge-type semiconductor laser with transversal diffraction gratings. [PDF]

Opt Quantum Electron, 2022
Hirose T, Numai T.
europepmc   +1 more source

Self-collimated unstable resonator semiconductor laser [PDF]

, 1993
Self-collimation of the output is achieved in an unstable resonator semiconductor laser by providing a large concave mirror M sub 1 and a small convex mirror M sub 2 on opposite surfaces of a semiconductor body of a material having an effective index of ...
Lang, Robert J.
core   +1 more source

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

Advanced Functional Materials, EarlyView.
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek, Seong Chul Hong, Jinwoo Kim, Hyeongseok Lee, Hyun Woo Jeong, Kenji Watanabe, Takashi Taniguchi, Min Hyuk Park, Gwan‐Hyoung Lee   +8 more
wiley   +1 more source

Spectra Narrowing of a 976 nm High Power External-Cavity Semiconductor Laser Based on a Transmission Grating

IEEE Photonics Journal
Broad-area 976 nm semiconductor lasers have garnered widespread attention for their applications in generating high-power 488 nm blue laser light and as pump sources for solid-state and ytterbium-doped fiber lasers.
Di Xin, Nihui Zhang, Lingqian Meng, Qinghao Zhao, Weiqiao Zhang, Fengxin Dong, Xuyan Zhou, Hongbo Zhang, Wanhua Zheng   +8 more
doaj   +1 more source

A 1-μm-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth. [PDF]

Sensors (Basel), 2022
Chen JQ, Chen C, Guo Q, Qin L, Zhang JW, Peng HY, Zhou YL, Sun JJ, Wu H, Yu YS, Ning YQ, Wang LJ.   +11 more
europepmc   +1 more source

Long Wavelength GaInAsP/InP Semiconductor Lasers for Optical Communications [PDF]

, 2006
Pei-Chuang Chen
openalex   +1 more source

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post‐Synaptic Current for Highly Accurate Spiking Neural Networks

Advanced Functional Materials, EarlyView.
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon, Soeun Park, Yeong Kwon Kim, Juhwan Baek, Ki Han Kim, Seongil Yun, Hyeonchang Son, Jeongeun Choi, Byung Chul Jang, Dong‐Ho Kang   +9 more
wiley   +1 more source

An Integrated Interferometric Fiber Optic Sensor Using a 638 nm Semiconductor Laser for Air-Water Surface Velocity Measurements. [PDF]

Sensors (Basel), 2023
Song R, Zhang X, Jiang L, Zhang Z, Qiao Z, Hao X, Su J, Lu C, Yang G, Xiong X, Gao L, Wu C.   +11 more
europepmc   +1 more source