Results 231 to 240 of about 220,832 (286)

Induced fit growth of Ga-based semiconductor thin films for brain-inspired electronics and optoelectronics. [PDF]

Light Sci Appl
Sa Z, Song K, Meng Y, Wu W, Wang Z, Li P, Zhang J, Zang Z, Wang G, Wang M, Jia Z, Tan Y, Li W, Yip S, Chen F, Ho JC, Yang ZX.   +16 more
europepmc   +1 more source

High-fidelity chip delayering using green (515 nm) femtosecond lasers. [PDF]

Sci Rep
Anaei MTM, Maniscalco M, Choi H, Emanuel M, Roser W, Bliznakov T, Moore T, Phoulady A, Mahyari P, Blagojevic A, May N, Egan GC, Shahbazmohamadi S, Tavousi P.   +13 more
europepmc   +1 more source

Strategies for Photoelectrochemical Splitting of Water. [PDF]

Int J Mol Sci
Ortiz BA, Trejo-Valdez M, Kumari P, Torres-Torres C.   +3 more
europepmc   +1 more source

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Bidirectional Semiconductor Laser

Science, 1999
A semiconductor laser capable of operating under both positive and negative bias voltage is reported. Its active region behaves functionally as two different laser materials, emitting different wavelengths, depending on the design, when biased with opposite polarities. This concept was used for the generation of two wavelengths (6.3 and 6.5 micrometers)
Gmachl C, TREDICUCCI, ALESSANDRO, Sivco DL, Hutchinson AL, Capasso F, Cho AY   +5 more
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Organic Semiconductor Lasers

Chemical Reviews, 2007
AbstractChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF.
I D W, Samuel, G A, Turnbull
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Semiconductor Interferometric Laser

Topical Meeting on Integrated and Guided-Wave Optics, 1982
Wavelength control of semiconductor lasers is important in optical communication, where mode stability, tunability, and FM modulation are vital to high quality transmission. Numerous work had been done in optimizing stripe geometry lasers to achieve mode stability.
Ismail H. A. Fattah, Shyh Wang
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Semiconductor Raman laser

Journal of Applied Physics, 1980
The semiconductor Raman laser has been realized by using a GaP crystal. Pumping is made by a Q-switched YAG laser operating at 1.064 μm. The round-trip loss in the Fabry-Perot resonator is 2% or less. The Raman scattering from LO phonons stimulates in the 〈100〉 direction, while the forward and backward Raman scattering from TO phonons stimulate in the 〈
K. Suto, J. Nishizawa
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Semiconductor Snail Laser

CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, 2009
A key advantage that semiconductor ring lasers have over Fabry-Perot (FP) devices for relatively high power applications, is that they do not suffer from Catastrophic Optical Damage (COD) to the cleaved facets of the device bar[1]. However, the directional coupler (DC) section in the ring geometry, equivalent to the facet conditions in a FP laser ...
Strain, M.J., Pérez-Serrano, A., Mezösi, G., Verschaffelt, G., Scirè, A., Danckaert, J., Sorel, M., Balle, S.   +7 more
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Terahertz semiconductor-heterostructure lasers

Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 2002
Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio-frequency emitters enable wireless communications. But the terahertz region (1-10 THz; 1 THz = 10(12) Hz)
KOEHLER R., TREDICUCCI A., BELTRAM F., BEERE H.E., LINFIELD E.H., DAVIES A.G., RITCHIE D.A., IOTTI, Rita Claudia, ROSSI, FAUSTO   +8 more
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