Results 41 to 50 of about 242,280 (338)

Passively mode-locked semiconductor laser for coherent population trapping in 87Rb [PDF]

open access: yes, 2011
Passively mode-locked semiconductor laser for coherent population trapping in <sup>87</sup>Rb is reported. The laser material used is a 793nm GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As single quantum well (QW) graded index ...
Bryce, C.A.   +6 more
core   +1 more source

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

open access: yesAdvanced Photonics Research, 2021
In the quest to expand the functionality and capacity of group IV semiconductor photonic systems, new materials and production methods are constantly being explored.
Ozan Aktas, Anna C. Peacock
doaj   +1 more source

A monolithically integrated optical repeater [PDF]

open access: yes, 1979
A monolithically integrated optical repeater has been fabricated on a single-crystal semi-insulating GaAs substrate. The repeater consists of an optical detector, an electronic amplifier, and a double heterostructure crowding effect laser.
Bar-Chaim, N.   +6 more
core   +1 more source

Trace Nickel Activated Biphasic Core‐CuOii/Shell‐CuOi Secondary Microspheres Enable Room Temperature Parts‐Per‐Trillion‐Level NO2 Detection

open access: yesAdvanced Engineering Materials, EarlyView.
An idea of designing novel sensors is proposed by creating appropriate Schottky barriers and vacancies between isomorphous Core‐CuOii/ Shell‐CuOi secondary microspheres and enhancing catalytic and spill‐over effects, and electronegativity via spontaneous biphasic separation, self‐assembly, and trace‐Ni‐doping.
Bala Ismail Adamu   +8 more
wiley   +1 more source

Generating of Chaotic Signals by using Semiconductor Laser with Optical Feedback [PDF]

open access: yesEngineering and Technology Journal, 2011
This paper addresses theoretically generating the chaotic signals by using semiconductor laser diode of 1550 nm with optical feedback. The performance of a semiconductor laser subjected to a delay optical feedback was investigated using rate equations ...
Shatha M. Hasan   +2 more
doaj   +1 more source

Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP [PDF]

open access: yes, 1982
Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process.
Bar-Chaim, N.   +5 more
core   +1 more source

Removing Homocoupling Defects in Alkoxy/Alkyl‐PBTTT Enhances Polymer:Fullerene Co‐Crystal Formation and Stability

open access: yesAdvanced Functional Materials, EarlyView.
PBTTT‐OR‐R, a C14‐alkoxy/alkyl‐PBTTT polymer derivative, is of substantial interest for optoelectronics due to its specific fullerene intercalation behavior and enhanced charge‐transfer absorption. Comparing this polymer with (S) and without (O) homocoupling defects reveals that PBTTT‐OR‐R(O) forms stable co‐crystals with PC61BM, while PBTTT‐OR‐R(S ...
Zhen Liu   +14 more
wiley   +1 more source

Frequency stabilization of an ultraviolet semiconductor disk laser [PDF]

open access: yes, 2013
We report a tunable, narrow-linewidth UV laser based on intracavity second-harmonic generation in a red semiconductor disk laser. Single-frequency operation is demonstrated with a total UV output power of 26 mW. By servo-locking the fundamental frequency
Hastie, Jennifer   +2 more
core   +1 more source

Unique Performance Considerations for Printable Organic Semiconductor and Perovskite Radiation Detectors: Toward Consensus on Best Practice Evaluation

open access: yesAdvanced Functional Materials, EarlyView.
A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar   +8 more
wiley   +1 more source

Combined High Power and High Frequency Operation of InGaAsP/InP Lasers at 1.3μm [PDF]

open access: yes, 1990
A simultaneous operation of a semiconductor laser at high power and high speed was demonstrated in a buried crescent laser on a P-InP substrate. In a cavity length of 300μm, a maximum CW power of 130mW at room temperature was obtained in a junction-up ...
Bar-Chaim, N.   +4 more
core   +1 more source

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