Results 41 to 50 of about 242,280 (338)
Passively mode-locked semiconductor laser for coherent population trapping in 87Rb [PDF]
Passively mode-locked semiconductor laser for coherent population trapping in <sup>87</sup>Rb is reported. The laser material used is a 793nm GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As single quantum well (QW) graded index ...
Bryce, C.A. +6 more
core +1 more source
Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems
In the quest to expand the functionality and capacity of group IV semiconductor photonic systems, new materials and production methods are constantly being explored.
Ozan Aktas, Anna C. Peacock
doaj +1 more source
A monolithically integrated optical repeater [PDF]
A monolithically integrated optical repeater has been fabricated on a single-crystal semi-insulating GaAs substrate. The repeater consists of an optical detector, an electronic amplifier, and a double heterostructure crowding effect laser.
Bar-Chaim, N. +6 more
core +1 more source
An idea of designing novel sensors is proposed by creating appropriate Schottky barriers and vacancies between isomorphous Core‐CuOii/ Shell‐CuOi secondary microspheres and enhancing catalytic and spill‐over effects, and electronegativity via spontaneous biphasic separation, self‐assembly, and trace‐Ni‐doping.
Bala Ismail Adamu +8 more
wiley +1 more source
Generating of Chaotic Signals by using Semiconductor Laser with Optical Feedback [PDF]
This paper addresses theoretically generating the chaotic signals by using semiconductor laser diode of 1550 nm with optical feedback. The performance of a semiconductor laser subjected to a delay optical feedback was investigated using rate equations ...
Shatha M. Hasan +2 more
doaj +1 more source
Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP [PDF]
Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process.
Bar-Chaim, N. +5 more
core +1 more source
PBTTT‐OR‐R, a C14‐alkoxy/alkyl‐PBTTT polymer derivative, is of substantial interest for optoelectronics due to its specific fullerene intercalation behavior and enhanced charge‐transfer absorption. Comparing this polymer with (S) and without (O) homocoupling defects reveals that PBTTT‐OR‐R(O) forms stable co‐crystals with PC61BM, while PBTTT‐OR‐R(S ...
Zhen Liu +14 more
wiley +1 more source
Frequency stabilization of an ultraviolet semiconductor disk laser [PDF]
We report a tunable, narrow-linewidth UV laser based on intracavity second-harmonic generation in a red semiconductor disk laser. Single-frequency operation is demonstrated with a total UV output power of 26 mW. By servo-locking the fundamental frequency
Hastie, Jennifer +2 more
core +1 more source
A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar +8 more
wiley +1 more source
Combined High Power and High Frequency Operation of InGaAsP/InP Lasers at 1.3μm [PDF]
A simultaneous operation of a semiconductor laser at high power and high speed was demonstrated in a buried crescent laser on a P-InP substrate. In a cavity length of 300μm, a maximum CW power of 130mW at room temperature was obtained in a junction-up ...
Bar-Chaim, N. +4 more
core +1 more source

