Results 241 to 250 of about 14,234 (351)

A bell-bloom atomic magnetic-videorecorder with global shutter and differential readout. [PDF]

open access: yesMicrosyst Nanoeng
He X   +11 more
europepmc   +1 more source

Statistical Properties of an External-Cavity Semiconductor Laser: Experiment and Theory

open access: green, 2015
Nianqiang Li   +4 more
openalex   +2 more sources

Photoelectric‐Coupled Ferroelectric Heterojunctions for Ultrahigh NO2 Sensing With Polarization‐Memory‐Assisted Interfacial Modulation

open access: yesAdvanced Science, EarlyView.
This study demonstrates a Bi2WO6/SrBi2Ta2O9 heterojunction where light‐driven ferroelectric polarization reversal couples with persistent photoconductivity, enabling exclusive NO2 selective room‐temperature sensing. The device achieves a two‐order‐of‐magnitude sensitivity enhancement over an unpolarized device, a sub‐ppb detection limit, and robust ...
Liping Tan   +11 more
wiley   +1 more source

Electromagnetic Radiation Stimulated Learning in Perovskite Nickelates

open access: yesAdvanced Science, EarlyView.
ABSTRACT Biological plasticity refers to the ability of synapses to strengthen or weaken over time. These adaptive properties play a fundamental role in learning and memory, spanning many orders of magnitude in timescales. Short‐term plasticity (STP) arises from rapid correlative activity, while long‐term plasticity (LTP) is governed by slower ...
Ranjan Kumar Patel   +8 more
wiley   +1 more source

Colossal Photovoltaic Current in Ferroelectric Oxide by Constructing Defect Band

open access: yesAdvanced Science, EarlyView.
Colossal photovoltaic current density of 34.36 mA/cm2 under 375 nm illumination has been achieved in the Pb‐deficient PbTiO3 film. The ultraviolet photoresponsivity surpasses that of all reported ferroelectric materials. This enhancement is attributed to the junction effect between the Pb‐deficient and non‐defective layers.
Yiran Sun   +16 more
wiley   +1 more source

Stepwise Engineering of Van der Waals Heterostructures for High Current Density in Light Emitting Devices

open access: yesAdvanced Electronic Materials, EarlyView.
A novel strategy for achieving high current density in van der Waals (vdW) heterostructure‐based light‐emitting devices (LEDs) is proposed. Based on this concept, an LED utilizing a WS2/WSe2 heterostructure was fabricated, achieving a current density of 9.4 × 104 A/cm2.
Rei Usami   +7 more
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash   +4 more
wiley   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix   +10 more
wiley   +1 more source

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

open access: yesAdvanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

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