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Theory of a semiconductor laser

SPIE Proceedings, 1990
This paper summarizes a simple single-mode theory of a semiconductor laser and two kinds of multimode extensions. The theories are based on an quasi-equilibrium Fermi-Dirac model of a two-band semiconductor laser gain medium. We include cavity boundary conditions and find the laser single-mode steady-state oscillation intensity. The question as to when
Murray Sargent III   +2 more
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Quasi-deterministic theory of semiconductor-laser gain switching

Optics Letters, 1990
The anomalous enhancement of fluctuations during gain switching of semiconductor lasers is considered. An extension of the quasi-deterministic theory is performed to account for the nonlinear dynamics of the process. The results are in quantitative agreement with those of a computer simulation of the Langevin rate equations describing the process.
MECOZZI, ANTONIO, SPANO P., SAPIA A.
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Nonequilibrium theory for semiconductor laser systems

SPIE Proceedings, 2006
A dynamical laser model is coupled to a fully microscopic calculation of scattering rates, allowing effcient calculations without phenomenological parameters. The approach is used to analyze nonequilibrium effects in the switch-on of an optically pumped laser structure. Lasing leads to kinetic hole burning in both electron and hole distribution.
A. Thränhardt   +7 more
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Theory of mode-locked semiconductor lasers

IEEE Journal of Quantum Electronics, 1996
We present a theoretical study of semiconductor mode-locked lasers at a phenomenological level. We use the slow absorber model of New and Haus, but extend the analysis by taking into account the shift in the gain maximum due to the changing number of carriers.
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Theory of Semiconductor Microcavities and Lasers

Quantum Optoelectronics, 1995
A fully quantum mechanical theory for the coupled electron-hole-pair and photon dynamics of semiconductor microcavity systems is presented. Based on a nonequilibrium Green’s functions approach, the carrier system is described by a generalized Boltzmann equation which includes contributions for carrier generation, carrier scattering by other carriers ...
S.W. Koch, F. Jahnke, H.C. Schneider
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Green’s functions theory for semiconductor-quantum-well laser spectra

Physical Review B, 1996
A microscopic approach for the computation of semiconductor quantum well laser power spectra is presented. The theory is based on nonequilibrium Green’s function techniques that allow for a consistent description of the coupled photon and carrier system fully quantum mechanically.
, Pereira, , Henneberger
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Microscopic theory of semiconductor microcavity lasers

OSA Annual Meeting, 1993
A quantum mechanical theory for the coupled photon-carrier system in semiconductor microcavity lasers is presented.
F. Jahnke, S. W. Koch, E. M. Wright
openaire   +1 more source

New theory of delays in semiconductor lasers

IEEE Journal of Quantum Electronics, 1976
A simple model which can explain practically all important features of time delays in GaAs lasers is presented. It assumes only the presence of traps within the forbidden band and considers that the relative movement of quasi-Fermi levels of traps with temperature controls the population of the empty traps which act as saturable absorbers and thereby ...
M. Ray, S. Baral, D. Bhattacharyya
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Semiconductor Lasers and Theory

2012
In this chapter, we discuss the oscillation conditions for semiconductor lasers and, then, derive the rate equations, which are the starting points of the study of chaotic dynamics in semiconductor lasers. The semiconductor laser described here is a Fabry-Perot type with a mono-layer of the active region, however other narrow-stripe edge-emitting ...
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Theory of Organic Semiconductor Lasers

2013
The theoretical background of organic semiconductor lasers (OSLs) is discussed in this chapter, including both an introduction to the relevant material physics of conjugated polymers and the operation of the common laser geometries - pump sources and resonators for OSLs.
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