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Theory of Semiconductor Quantum Dot Lasers

ECS Transactions, 2009
Operating characteristics of quantum dot (QD) lasers are discussed. Carrier-density-dependent internal loss sets an upper limit for operating temperatures and considerably reduces the characteristic temperature. Such a loss also constrains the shallowest potential well depth and the smallest tolerable size of a QD at which the lasing can be attained ...
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Theory of semiconductor quantum-dot laser dynamics

IEEE Journal of Quantum Electronics, 2005
A theory for describing nonequilibrium dynamics in a semiconductor quantum-dot laser is presented. This theory is applied to a microcavity laser with a gain region consisting of an inhomogeneous distribution of quantum dots, a quantum-well wetting layer, and injection pumped bulk regions. Numerical results are presented and the effects of spectral hole
W.W. Chow, S.W. Koch
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Theory of the gain of semiconductor lasers

Soviet Journal of Quantum Electronics, 1974
A theoretical, investigation is made of the laser gain associated with interband transitions in heavily doped semiconductors. Analytic expressions are obtained for the gain and quasi-Fermi levels considered as a function of the impurity concentration, temperature, and pumping power.
A G Aleksanyan   +2 more
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Light ray theory of semiconductor microdisk lasers

SPIE Proceedings, 2000
The paper has analyzed the light waveguide characteristics of microdisk lasers with the light ray theory for the first time, obtained the same result derived by Helmholtz wave equation theory and it is in good agreement with experimental results.
Genzhu Wu   +4 more
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Theory and simulation of spatially extended semiconductor lasers

AIP Conference Proceedings, 2000
A hierarchy of theoretical models ranging from microscopic levels of description to effective rate equations is presented in terms of characteristic physical processes of the active semiconductor medium and the light field occurring in space and time. The applicability of the various levels of approximations of the hierarchy to describe the dynamics of
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Theory of Sub-Picosecond Semiconductor Lasers

Semiconductor Lasers Advanced Devices and Applications, 1995
Theories of laser mode-locking were developed in the seventies for dye lasers. However, semiconductor lasers are characterized by quite different parameters and the approximations that can be justified for dye lasers break down for semiconductor lasers. In this paper we study the resulting pulse duration using the model introduced by New and Haus [1, 2]
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Nonlinear laser theory and natural linewidth in semiconductor lasers

2008 IEEE 25th Convention of Electrical and Electronics Engineers in Israel, 2008
Our approach to the problem is based on the following basic concepts: using a spatially-distributed laser model; using an approximate Kovalevski-Noppe (KN) expression for effective natural linewidth for semiconductor lasers with application of generalized parameters.
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Theory of the linewidth of semiconductor lasers

IEEE Journal of Quantum Electronics, 1982
A theory of the spectral width of a single-mode semiconductor laser is presented and used to explain the recent measurements of Fleming and Mooradian on AlGaAs lasers. They found the linewidth to be inversely proportional to power and to have a value of 114 MHz at 1 mW per facet. This value is 30 times greater than can be explained by existing theories.
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Semiconductor laser theory with many-body effects

Annual Meeting Optical Society of America, 1988
A theory of a semiconductor laser is developed that includes the many-body effects due to Coulomb interactions. The theory is valid for both 3-D bulk semiconductors as well as quasi-2-D quantum well structures. We emphasize plasma density-dependent band gap renormalization, broadening due to intraband scattering, and electron–hole Coulomb enhancement ...
Stephan W. Koch   +2 more
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