Results 291 to 300 of about 14,234 (351)

Near-Field Imaging of Hybrid Surface Plasmon-Phonon Polaritons on n-GaN Semiconductor. [PDF]

Materials (Basel)
Janonis V, Cernescu A, Prystawko P, Januškevičius R, Indrišiūnas S, Kašalynas I.   +5 more
europepmc   +1 more source

Highly Sensitive SERS Detection of Food Colorants via Charge Transfer of Metal and Semiconductor in Ag/TiO₂/Ti Foam. [PDF]

Foods
Wang Q, Jing Y, Zhang, Wang R, Chen L, Zhang J, Sui S, Wang X.   +7 more
europepmc   +1 more source

Theory of Modulation Response of Semiconductor Quantum Dot Lasers

, 2013
Yuchang Wu
openalex   +1 more source

Larkin length as a criterion for antiferromagnetic writing

Khokhlov N, Buzdakov A, Gareev T, Li S, Wang X, Artyukhin S, Kimel A.   +6 more
europepmc   +1 more source

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9B10 - Theory of the interband magnetooptical semiconductor laser

IEEE Journal of Quantum Electronics, 1966
The operation of the interband magnetooptical semiconductor laser has been realized by two techniques, viz., injection and optical pumping. This paper considers the theory of the electro-magnetic modes and threshold conditions which can be applied to either of these configurations.
B Lax
exaly   +2 more sources

Theory of a semiconductor laser

SPIE Proceedings, 1990
This paper summarizes a simple single-mode theory of a semiconductor laser and two kinds of multimode extensions. The theories are based on an quasi-equilibrium Fermi-Dirac model of a two-band semiconductor laser gain medium. We include cavity boundary conditions and find the laser single-mode steady-state oscillation intensity. The question as to when
Murray Sargent III, Stephan W. Koch, Weng W. Chow   +2 more
openaire   +1 more source

Master-equation theory of semiconductor lasers

Physical Review A, 1995
A master-equation approach to the semiconductor laser is derived. Projection-operator techniques are used to eliminate the fast motion occurring in the system, leading to a description of the system in terms of numbers of electrons and holes, with a fully quantum-mechanical description of the field.
, Gardiner, , Eschmann
openaire   +2 more sources

Theory of the gain of semiconductor lasers

Soviet Journal of Quantum Electronics, 1974
A theoretical, investigation is made of the laser gain associated with interband transitions in heavily doped semiconductors. Analytic expressions are obtained for the gain and quasi-Fermi levels considered as a function of the impurity concentration, temperature, and pumping power.
A G Aleksanyan, I A Poluéktov, Yurii M Popov   +2 more
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Theory of Semiconductor Microcavities and Lasers

Quantum Optoelectronics, 1995
A fully quantum mechanical theory for the coupled electron-hole-pair and photon dynamics of semiconductor microcavity systems is presented. Based on a nonequilibrium Green’s functions approach, the carrier system is described by a generalized Boltzmann equation which includes contributions for carrier generation, carrier scattering by other carriers ...
S.W. Koch, F. Jahnke, H.C. Schneider
openaire   +1 more source

Many-body theory for semiconductor microcavity lasers

Physical Review A, 1995
The influence of many-body, nonequilibrium, and cavity effects on the emission characteristics and carrier dynamics of semiconductor microcavity lasers is investigated. The nonlinear coupled equations for the carrier kinetics and the laser dynamics are derived.
, Jahnke, , Koch
openaire   +2 more sources