Results 311 to 320 of about 14,234 (351)

A simple theory of the laser-induced damage in semiconductors

Applied Physics, 1977
A simple theory is presented for the laser-induced damage in semiconductors in the range of low irradiation intensities. This theory avoids the solution of coupled differential equations, and takes into account characteristic physical properties of semiconductors—i.e. energy gap, carrier lifetime, and surface recombination velocity.
openaire   +2 more sources

Microscopic theory of semiconductor microcavity lasers

OSA Annual Meeting, 1993
A quantum mechanical theory for the coupled photon-carrier system in semiconductor microcavity lasers is presented.
F. Jahnke, S. W. Koch, E. M. Wright
openaire   +1 more source

Nonequilibrium theory for semiconductor laser systems

SPIE Proceedings, 2006
A dynamical laser model is coupled to a fully microscopic calculation of scattering rates, allowing effcient calculations without phenomenological parameters. The approach is used to analyze nonequilibrium effects in the switch-on of an optically pumped laser structure. Lasing leads to kinetic hole burning in both electron and hole distribution.
A. Thränhardt, S. Becker, C. Schlichenmaier, I. Kuznetsova, S. W. Koch, J. Hader, J. V. Moloney, W. W. Chow   +7 more
openaire   +1 more source

Theory and simulation of spatially extended semiconductor lasers

AIP Conference Proceedings, 2000
A hierarchy of theoretical models ranging from microscopic levels of description to effective rate equations is presented in terms of characteristic physical processes of the active semiconductor medium and the light field occurring in space and time. The applicability of the various levels of approximations of the hierarchy to describe the dynamics of
openaire   +2 more sources

Filtered external optical feedback in a semiconductor laser: theory and experiment

Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088), 2000
Summary form only given.Over the 1980s/1990s, external cavity diode lasers have been successfully utilized for, among others, linewidth narrowing, suppression of unwanted secondary longitudinal modes, and reduction of modulation-induced frequency chirp.
Yousefi, M., Andersen, O.K., Fischer, A., Stolte, S., Lenstra, D.   +4 more
openaire   +4 more sources

Green’s functions theory for semiconductor-quantum-well laser spectra

Physical Review B, 1996
A microscopic approach for the computation of semiconductor quantum well laser power spectra is presented. The theory is based on nonequilibrium Green’s function techniques that allow for a consistent description of the coupled photon and carrier system fully quantum mechanically.
, Pereira, , Henneberger
openaire   +2 more sources

The theory of laser annealing of disordered semiconductors

Physics Letters A, 1980
Abstract A theoretical explanation of the disorder-order phase transition in pulsed laser annealing of ion implanted Si is given. The phase transition is related to the Bose condensation of electron-hole plasmons.
openaire   +1 more source

Theory of Semiconductor Quantum Dot Lasers

ECS Transactions, 2009
Operating characteristics of quantum dot (QD) lasers are discussed. Carrier-density-dependent internal loss sets an upper limit for operating temperatures and considerably reduces the characteristic temperature. Such a loss also constrains the shallowest potential well depth and the smallest tolerable size of a QD at which the lasing can be attained ...
openaire   +1 more source

Theory of the dynamics of semiconductor injection lasers

Journal of the Optical Society of America B, 1988
Theoretical analysis of temporal behavior of the semiconductor injection laser in a large signal approximation is described. The parameters of the statistical limit cycle are calculated for the case of deep pulsation when the minimum of the pulse intensity is compared with the spontaneous emission level.
openaire   +1 more source

On fundamentals of nonlinear theory for semiconductor lasers

2016 13th International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE), 2016
Fundamentals of the nonlinear theory of Fabry-Perot semiconductor lasers have been developed, an integral part of which is the natural linewidth theory. The formula for gain depending on the energy flux specifies the basic nonlinear effect in a laser. Necessary conditions for stimulated emission of the first and second kind are presented.
openaire   +1 more source