Results 301 to 310 of about 14,234 (351)

Semiconductor laser theory with many-body effects

Physical Review A, 1989
A description of the electron-hole plasma of a semiconductor laser is developed that includes the many-body effects due to the Coulomb interactions. In particular, the plasma density-dependent band-gap renormalization, the broadening due to intraband scattering, and the Coulomb enhancement are included and evaluated for three- and two-dimensional ...
, Haug, , Koch
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Quantum Kinetic Theory of the Semiconductor Laser

1996
K Henneberger, S W Koch
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Theory of a multimode quasiequilibrium semiconductor laser

Physical Review A, 1993
This paper gives a simple plane-wave multimode semiconductor-laser theory valid near threshold under the quasiequilibrium assumption that the total field envelope varies little in the intraband scattering times. Subject to these limitations, the theory is able to describe the full many-body effects in the semiconductor medium for a variety of field ...
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Theory of mode-locked semiconductor lasers

IEEE Journal of Quantum Electronics, 1996
We present a theoretical study of semiconductor mode-locked lasers at a phenomenological level. We use the slow absorber model of New and Haus, but extend the analysis by taking into account the shift in the gain maximum due to the changing number of carriers.
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Quasi-deterministic theory of semiconductor-laser gain switching

Optics Letters, 1990
The anomalous enhancement of fluctuations during gain switching of semiconductor lasers is considered. An extension of the quasi-deterministic theory is performed to account for the nonlinear dynamics of the process. The results are in quantitative agreement with those of a computer simulation of the Langevin rate equations describing the process.
MECOZZI, ANTONIO, SPANO P., SAPIA A.
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Theory of the linewidth of semiconductor lasers

IEEE Journal of Quantum Electronics, 1982
A theory of the spectral width of a single-mode semiconductor laser is presented and used to explain the recent measurements of Fleming and Mooradian on AlGaAs lasers. They found the linewidth to be inversely proportional to power and to have a value of 114 MHz at 1 mW per facet. This value is 30 times greater than can be explained by existing theories.
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Semiconductor Lasers and Theory

2012
In this chapter, we discuss the oscillation conditions for semiconductor lasers and, then, derive the rate equations, which are the starting points of the study of chaotic dynamics in semiconductor lasers. The semiconductor laser described here is a Fabry-Perot type with a mono-layer of the active region, however other narrow-stripe edge-emitting ...
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New theory of delays in semiconductor lasers

IEEE Journal of Quantum Electronics, 1976
A simple model which can explain practically all important features of time delays in GaAs lasers is presented. It assumes only the presence of traps within the forbidden band and considers that the relative movement of quasi-Fermi levels of traps with temperature controls the population of the empty traps which act as saturable absorbers and thereby ...
M. Ray, S. Baral, D. Bhattacharyya
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Theory of noise in semiconductor laser emission

Zeitschrift für Physik A Hadrons and nuclei, 1967
For the complex light field amplitude of a semiconductor laser an equation of a generalized van der Pol oscillator with a fluctuating driving term is derived from first principles. This equation is shown to be valid for optical band-to-band transitions with and withoutk-selection rule. Neglecting the nonlinearity in the saturation higher than of second
H. Haug, H. Haken
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Theory of Organic Semiconductor Lasers

2013
The theoretical background of organic semiconductor lasers (OSLs) is discussed in this chapter, including both an introduction to the relevant material physics of conjugated polymers and the operation of the common laser geometries - pump sources and resonators for OSLs.
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