Results 51 to 60 of about 14,234 (351)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Passively mode-locked semiconductor lasers and their applications [PDF]

open access: yes, 2008
In this paper we present some characterizations of passively mode-locked semiconductor lasers. These lasers are multimode and they exhibit a modulation of their output power even though they are DC-biased.
Frederic Surre   +5 more
core   +1 more source

Unlocking Multi‐Valley Energy Pockets and Interface‐Induced Phonon Filtering in InSb Thermoelectrics by Reaction‐Driven Interface Engineering

open access: yesAdvanced Functional Materials, EarlyView.
InSb, a narrow‐bandgap semiconductor with high carrier mobility, is promising for thermoelectric energy conversion but suffers from high lattice thermal conductivity and strong bipolar conduction. Here, in situ interface engineering using Co2O3 nanoprecursors forms hierarchical CoSbx/In2O3/CoSb3 heterostructures that enhance phonon scattering and ...
Jiwu Xin   +10 more
wiley   +1 more source

Calibration Method for Industrial Robots Based on the Principle of Perigon Error Close

open access: yesIEEE Access, 2022
For the problem that the self-error of industrial robot calibration device has influence on calibration accuracy, a calibration method of industrial robots based on the principle of Perigon Error Close is proposed.
Xirui Li   +3 more
doaj   +1 more source

Design Strategies and Emerging Applications of High‐Performance Flexible Piezoresistive Pressure Sensors

open access: yesAdvanced Functional Materials, EarlyView.
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo   +2 more
wiley   +1 more source

Stability Boundaries in Laterally-Coupled Pairs of Semiconductor Lasers

open access: yesPhotonics, 2019
The dynamic behaviour of coupled pairs of semiconductor lasers is studied using normal-mode theory, applied to one-dimensional (slab) and two-dimensional (circular cylindrical) real index confined structures.
Martin Vaughan   +4 more
doaj   +1 more source

Closed Loop Control of Melt Pool Width in Laser Directed Energy Deposition Process Based on PSO-LQR

open access: yesIEEE Access, 2023
A closed-loop controller was proposed to adjust the laser power to maintain melt pool stability based on the linear quadratic regulator (LQR) control theory.
Liguo Miao, Fei Xing, Yuanxin Chai
doaj   +1 more source

Formation of Quasi‐Decoupling Interface on Li‐Metal Anodes in High Donor Electrolyte

open access: yesAdvanced Functional Materials, EarlyView.
Li‐metal anode (LMA) is stabilized by introducing Li2Te2 as an electrolyte additive for Li‐metal batteries. Upon contact with Li, Li2Te2 spontaneously converts to Li2Te, which electronically isolates Li from dimethyl sulfoxide due to its large bandgap and minimal Bader charge transfer.
Hyerim Kim   +9 more
wiley   +1 more source

Photothermal dynamics in functionally graded semiconductors with size-dependent effects under pulsed laser excitation

open access: yesDefence Technology
This study investigates the photothermal behavior of nonlocal, functionally graded (FG) semiconductor materials under ultra-short pulsed laser heating, addressing a critical gap in understanding the interplay of plasma, thermal, and elastic waves ...
Kareem Alanazi   +2 more
doaj   +1 more source

Measurement of thermoelectric parameters of thin-film semiconductor materials using the Harman method

open access: yesФізика і хімія твердого тіла, 2019
For the analysis of the measurement of thermoelectric parameters of semiconductors, the Harman pulsed method was used. The authors propose a new approach to determine the thermoelectric quality factor of thin semiconductor films in the temperature ...
Y. V. Tur, Y. V. Pavlovskyi, I. S. Virt
doaj   +1 more source

Home - About - Disclaimer - Privacy