Results 1 to 10 of about 2,218,259 (288)

Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells. [PDF]

Sci Rep, 2019
Whilst the different forms of conventional (charge-based) memories are well suited to their individual roles in computers and other electronic devices, flaws in their properties mean that intensive research into alternative, or emerging, memories ...
Tizno O, Marshall ARJ, Fernández-Delgado N, Herrera M, Molina SI, Hayne M.   +5 more
europepmc   +4 more sources

In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives [PDF]

Advanced Intelligent Systems, 2020
The low communication bandwidth between memory and processing units in conventional von Neumann machines does not support the requirements of emerging applications that rely extensively on large sets of data. More recent computing paradigms, such as high
Amirali Amirsoleimani, Fabien Alibart, Victor Yon, Jianxiong Xu, M. Reza Pazhouhandeh, Serge Ecoffey, Yann Beilliard, Roman Genov, Dominique Drouin   +8 more
openalex   +2 more sources

Organic Phase‐Change Memory Transistor Based on an Organic Semiconductor with Reversible Molecular Conformation Transition [PDF]

Advanced Science, 2023
Phase‐change semiconductor is one of the best candidates for designing nonvolatile memory, but it has never been realized in organic semiconductors until now.
Yongxu Hu, Lei Zheng, Jie Li, Yinan Huang, Zhongwu Wang, Xueying Lu, Li Yu, Shuguang Wang, Yajing Sun, Shuaishuai Ding, Deyang Ji, Yong Lei, Xiaosong Chen, Liqiang Li, Wenping Hu   +14 more
doaj   +2 more sources

The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field-Effect Transistors

IEEE Journal of the Electron Devices Society, 2020
In this work, channel semiconductor is identified and demonstrated to have significant impact on the memory characteristics of ferroelectric field-effect transistors (Fe-FETs).
Mengwei Si, Zehao Lin, Jinhyun Noh, Junkang Li, Wonil Chung, Peide D. Ye   +5 more
doaj   +2 more sources

Oxide Semiconductor Memristor‐Based Optoelectronic Synaptic Devices With Quaternary Memory Storage

Advanced Electronic Materials
A pioneering integration of oxide semiconductor memristors with optoelectronic features is presented, surpassing binary limitations to realize multi‐valued synaptic operations.
Jeong‐Hyeon Kim, Hye Jin Lee, Hee‐Jin Kim, Jongyun Choi, Jae‐Hyeok Oh, Dae‐Choul Choi, Jisu Byun, Seung‐Eon Ahn, Sung‐Nam Lee   +8 more
doaj   +2 more sources

Technology of Flexible Semiconductor/Memory Device [PDF]

, 2013
Jong‐Hyun Ahn, Hyouk Lee, Sung‐Hoon Choa   +2 more
openalex   +2 more sources

A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory [PDF]

Advances in Materials, 2022
Ferroelectricity, one of the keys to realize non‐volatile memories owing to the remanent electric polarization, is an emerging phenomenon in the 2D limit.
Wanying Li, Yi Guo, Zhao-hua Luo, Shuhao Wu, Bo Han, Weijin Hu, Lu You, Kenji Watanabe, T. Taniguchi, T. Alava, Jiezhi Chen, Peng Gao, Xiuyan Li, Zhongming Wei, Lin-Wang Wang, Yueyang Liu, Chengxin Zhao, Xuepeng Zhan, Z. Han, Hanwen Wang   +19 more
semanticscholar   +1 more source

Accurate Layout-Dependent Effect Model in 10 nm-Class DRAM Process Using Area-Efficient Array Test Circuits

IEEE Access, 2023
This study presents an accurate model for non-monotonic layout-dependent effects (LDEs) measured using 10nm-class dynamic random access memory technology.
Seyoung Kim, Seungho Yang, Hyein Lim, Hyein Lee, Jongwook Jeon, Jung Yun Choi, Jaeha Kim   +6 more
doaj   +1 more source

Area-Scalable 10⁹-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process

Nanomaterials, 2021
Strontium bismuth tantalate (SBT) ferroelectric-gate field-effect transistors (FeFETs) with channel lengths of 85 nm were fabricated by a replacement-gate process.
Mitsue Takahashi, Shigeki Sakai
doaj   +1 more source

Nanoparticle floating-gate transistor memory based on solution-processed ambipolar organic semiconductor [PDF]

E3S Web of Conferences, 2020
Organic thin-film transistor memory based on nano-floating-gate nonvolatile memory was demonstrated by a simple method. The gold nanoparticle that fabricated by thermally evaporated acted as the floating gate. Spin coated PMMA film acted as the tunneling
Sun Sheng, Zhang Shengdong
doaj   +1 more source