Results 91 to 100 of about 2,218,259 (288)

Silicon Nitride Based Non-Volatile Memory Structures with Embedded Si or Ge Nanocrystals

Communications, 2010
Memory structures with an embedded sheet of separated Si or Ge nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control and SiO2 tunnel layers. It was obtained that a properly located layer of semiconductor nanocrystals
Zsolt J. Horvath, P. Basa, T. Jaszi, A. E. Pap, Gy. Molnar, A. I. Kovalev, D. L. Wainstein, T. Gerlai, P. Turmezei   +8 more
doaj   +1 more source

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

Advanced Functional Materials, EarlyView.
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek, Seong Chul Hong, Jinwoo Kim, Hyeongseok Lee, Hyun Woo Jeong, Kenji Watanabe, Takashi Taniguchi, Min Hyuk Park, Gwan‐Hyoung Lee   +8 more
wiley   +1 more source

Damascene versus subtractive line CMP process for resistive memory crossbars BEOL integration

Micro and Nano Engineering
In recent years, resistive memories have emerged as a pivotal advancement in the realm of electronics, offering numerous advantages in terms of energy efficiency, scalability, and non-volatility [1].
Raphaël Dawant, Matthieu Gaudreau, Marc-Antoine Roy, Pierre-Antoine Mouny, Matthieu Valdenaire, Pierre Gliech, Javier Arias Zapata, Malek Zegaoui, Fabien Alibart, Dominique Drouin, Serge Ecoffey   +10 more
doaj   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

Advanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

Enhancing the Capacitive Memory Window of HZO FeCap Through Nanolaminate Stack Design

Advanced Electronic Materials
Recently, a capacitive array based on Hf0.5Zr0.5O2 (HZO) has been proposed as an alternative to conventional resistive crossbar arrays for compute‐in‐memory (CIM). This array operates through a capacitive memory window (CMWε).
Mostafa Habibi, Alireza Kashir, Seungyeol Oh, Hojung Jang, Hyunsang Hwang   +4 more
doaj   +1 more source

Memory Effect in the Photoinduced Femtosecond Rotation of Magnetization in the Ferromagnetic Semiconductor GaMnAs [PDF]

, 2008
J. Wang, Ingrid Cotoros, X. Liu, J. Chovan, J. K. Furdyna, I. E. Perakis, D. S. Chemla   +6 more
openalex   +1 more source

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post‐Synaptic Current for Highly Accurate Spiking Neural Networks

Advanced Functional Materials, EarlyView.
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon, Soeun Park, Yeong Kwon Kim, Juhwan Baek, Ki Han Kim, Seongil Yun, Hyeonchang Son, Jeongeun Choi, Byung Chul Jang, Dong‐Ho Kang   +9 more
wiley   +1 more source

Response to “Comments on Seo et al., Materials & Design 117 (2017) 131–138, DOI: 10.1016/j.matdes.2016.12.066”

Materials & Design
We would like to respond to “Comments on Seo et al., Materials & Design 117 (2017) 131–138, https://doi.org/10.1016/j.matdes.2016.12.066″. Mangindaan et al.
Ganggyu Lee, Kangchun Lee, Jinok Moon, Taeseup Song, Dong-Hee Lee, Ungyu Paik   +5 more
doaj   +1 more source

Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

Nature Communications, 2017
Organic non-volatile memories based on ferroelectric and semiconductor polymers are one of promising candidates for flexible electronics, yet the relevant device physics remains elusive. Ghittorelliet al.
Matteo Ghittorelli, Thomas Lenz, Hamed Sharifi Dehsari, Dong Zhao, Kamal Asadi, Paul W. M. Blom, Zsolt M. Kovács-Vajna, Dago M. de Leeuw, Fabrizio Torricelli   +8 more
doaj   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source