Results 111 to 120 of about 2,218,259 (288)

A 3-D Bank Memory System for Low-Power Neural Network Processing Achieved by Instant Context Switching and Extended Power Gating Time

IEEE Journal of the Electron Devices Society
Using a 3-D monolithic stacking memory technology of crystalline oxide semiconductor (OS) transistors, we fabricated a test chip having AI accelerator (ACC) memory for weight data of a neural network (NN), backup memory of flip-flops (FF), and CPU memory
Kouhei Toyotaka, Yuto Yakubo, Kazuma Furutani, Haruki Katagiri, Masashi Fujita, Yoshinori Ando, Toru Nakura, Shunpei Yamazaki   +7 more
doaj   +1 more source

PN-Diode P-Oxide-Semiconductor/N-SiC/N-Si Resistive Nonvolatile Memory for Cross-Point Memory Array [PDF]

, 2013
Yoshihiko Sato, Atsushi Yamashita, Takahiro Tsukamoto, Yoshiyuki Suda   +3 more
openalex   +1 more source

Does a Morphotropic Phase Boundary Exist in ZrxHf1‐xO2‐Based Thin Films?

Advanced Functional Materials, EarlyView.
This study investigates 6 nm zirconium‐rich hafnium‐zirconium oxide thin–film metal–insulator–metal capacitors using a combination of experimental methods and machine learning–based molecular dynamics simulations to provide insight into the physical mechanisms that enhance the dielectric constant near 0 V and attribute it to the field‐induced ...
Pramoda Vishnumurthy, Richard Ganser, Dong‐Gyu Kim, Intak Jeon, Chang Hwa Jung, Hanjin Lim, Thomas Mikolajick, Susan Trolier‐McKinstry, Alfred Kersch, Uwe Schroeder   +9 more
wiley   +1 more source

Enhancing Synaptic Plasticity and Multistate Retention of Organic Neuromorphic Devices Using Anion‐Excessive Gel Electrolyte

Advanced Functional Materials, EarlyView.
Anion‐excessive gel‐based organic synaptic transistors (AEG‐OSTs) that can maintain electrical neutrality are developed to enhance synaptic plasticity and multistate retention. Key improvement is attributed to the maintenance of electrical neutrality in the electrolyte even after electrochemical doping, which reduces the Coulombic force acting on ...
Yousang Won, Jeongwoo Lee, Hyunwook Kim, Joon Hak Oh   +3 more
wiley   +1 more source

A Programmable Semiconductor Containing Active Molecular Photoswitches Located in the Crystal's Volume Phase

Advanced Functional Materials, EarlyView.
A novel approach for the design of functional semiconductors is presented, which utilizes the excellent optoelectronic properties of layered hybrid perovskites and the possibility to introduce a molecular photoswitch as the organic spacer. This concept is successfully demonstrated on a coumarin‐based system with the possibility to change the bandgap ...
Oliver Treske, Yaşar Krysiak, Hans Tornatzky, Markus R. Wagner, Sebastian Polarz   +4 more
wiley   +1 more source

Single electron-spin memory with a semiconductor quantum dot [PDF]

, 2007
Robert J. Young, Samuel Dewhurst, R. M. Stevenson, P. Atkinson, A. J. Bennett, Martin B. Ward, Ken B. Cooper, D. A. Ritchie, A. J. Shields   +8 more
openalex   +1 more source

Coherent Control of Nitrogen Nuclear Spins via the VB−${\rm V}_B^-$‐Center in Hexagonal Boron Nitride

Advanced Functional Materials, EarlyView.
This study demonstrates coherent control of 15N nuclear spins coupled to VB−${\text{V}}_{\text{B}}^{-}$ centers in isotope‐enriched hexagonal boron nitride. Selective addressing via spin‐state mixing enables Rabi driving, quantum gates, and coherence times exceeding 10 μs$\umu{\rm s}$.
Adalbert Tibiássy, Charlie J. Patrickson, Thomas Poirier, James H. Edgar, Bruno Lopez‐Rodriguez, Viktor Ivády, Isaac J. Luxmoore   +6 more
wiley   +1 more source

Publisher's Note: Spin memristive systems: Spin memory effects in semiconductor spintronics [Phys. Rev. B78, 113309 (2008)] [PDF]

, 2008
Yu. V. Pershin, Massimiliano Di Ventra
openalex   +1 more source

Spectrally Tuned Floating‐Gate Synapse Based on Blue‐ and Red‐Absorbing Organic Molecules for Wavelength‐Selective Neural Networks and Fashion Image Classifications

Advanced Functional Materials, EarlyView.
The characteristics of a vertical floating gate heterostructure transistor device that exhibits neuromorphic potentiation under visible light illumination are investigated. Due to spectrally‐tuned absorbance properties of each thin film layer and introduction of tunneling dielectric, the device enables wavelength‐selective tuning of synaptic plasticity
Seungme Kang, Jisoo Park, Jinwoong Hong, Jinmin Park, Jeongbo Lee, Hyeonjung Kim, Wonjun Shin, Eva Bestelink, Radu A. Sporea, Seyong Oh, Chung Whan Lee, Yun‐Hi Kim, Hocheon Yoo   +12 more
wiley   +1 more source

Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor [PDF]

, 2015
Gerwin H. Gelinck, Albert J. J. M. van Breemen, Brian Cobb   +2 more
openalex   +1 more source