Results 171 to 180 of about 2,218,259 (288)

Capacitors with an Equivalent Oxide Thickness of < 0.5 nm for Nanoelectronic Semiconductor Memory [PDF]

, 2010
Seong Keun Kim, Sang Woon Lee, Jeong Hwan Han, Bora Lee, Seungwu Han, Cheol Seong Hwang   +5 more
openalex   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

Bi₂O₂Se-Based Monolithic Floating-Gate Nonvolatile Memory with Enhanced Charge Retention and Switching Performance. [PDF]

ACS Nano
Cheng CC, Chien HC, Lee TT, Chen YC, Nguyen HU, Chen SZ, Lin YC, Suenaga K, Shen CH, Chueh YL, Lin YF, Chou MY, Chiu PW.   +12 more
europepmc   +1 more source

Constant current forming in amorphous silicon semiconductor memory devices

, 1998
Jian Hu
openalex   +1 more source

Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

Advanced Materials, EarlyView.
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu, Xiaoshi Qian, Dahong Qian, Paolo Samorì   +3 more
wiley   +1 more source

A Fully Si-Compatible Ni/Si₃N₄/Al₂O₃/<i>p</i> ⁺ Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applications. [PDF]

ACS Omega
Lee Y, Kim S, Kim S, Shim W, Kim S, Cho S.   +5 more
europepmc   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

The rise of rubber-like synthetic polymers in next-gen transistor technologies. [PDF]

Chem Sci
Laysandra L, Bazliah D, Sentosa DM, Heksa AC, Bui HK, Li YC, Chiu YC.   +6 more
europepmc   +1 more source

Ultrathin Monatomic Antimony Films by Sacrificial Atomic Layer Deposition for Phase Change Memory

Advanced Materials, EarlyView.
A three‐step sacrificial atomic layer deposition (s‐ALD) process enables wafer‐scale growth of ultrathin and uniform antimony (Sb) thin films. An ultrathin (≈4 nm) Sb film is uniformly deposited with its characteristic bilayer structure (Sb‐Sb) aligned along the substrate.
Gwangsik Jeon, Sangmin Jeon, Seunghwan Lee, Jeong Woo Jeon, Wonho Choi, Byongwoo Park, Sungjin Kim, Chanyoung Yoo, Hyejin Jang, Cheol Seong Hwang   +9 more
wiley   +1 more source

Enabling scalable ferroelectric-based future generation vertical NAND flash with bonding-friendly architecture: strategies for erase and disturb optimization. [PDF]

Nanoscale Adv
Song I, Kim J, Lee S, Myeong I.
europepmc   +1 more source