Results 11 to 20 of about 2,218,259 (288)

Reliability of computer memories in radiation environment [PDF]

Nuclear Technology and Radiation Protection, 2016
The aim of this paper is examining a radiation hardness of the magnetic (Toshiba MK4007 GAL) and semiconductor (AT 27C010 EPROM and AT 28C010 EEPROM) computer memories in the field of radiation.
Fetahović Irfan S., Dolićanin Edin Ć., Lončar Boris B., Kartalović Nenad M.   +3 more
doaj   +1 more source

2D layered metal-halide perovskite/oxide semiconductor-based broadband optoelectronic synaptic transistors with long-term visual memory

Journal of Materials Chemistry C, 2021
High-performance optoelectronic synaptic transistors are reported with a long-term memory by using organic–inorganic halide perovskites and oxide semiconductors.
Youngjune Park, Min-Kyu Kim, Jang‐Sik Lee   +2 more
semanticscholar   +1 more source

Insertion of Ag Layer in TiN/SiN_x/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation

IEEE Access, 2020
In this study, the electrical characteristics of TiN/SiNx/TiN and TiN/Ag/SiNx/TiN RRAMs were thoroughly investigated through I-V measurements. Our novel Ag-inserted silicon nitride-based resistive switching memory (RRAM) achieved switching operation at ...
Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park   +9 more
doaj   +1 more source

Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines, 2021
Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-
Young Jin Choi, Jihyun Kim, Min Je Kim, Hwa Sook Ryu, Han Young Woo, Jeong Ho Cho, Joohoon Kang   +6 more
doaj   +1 more source

Logic-in-Memory Based on an Atomically Thin Semiconductor

Nature, 2020
The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in ...
Guilherme Migliato Marega, Yanfei Zhao, Ahmet Avsar, Zhenyu Wang, M. Tripathi, A. Radenović, A. Kis   +6 more
semanticscholar   +1 more source

Extended Worst-Case OSNR Searching Algorithm for Optical Network-on-Chip Using a Semi-Greedy Heuristic With Adaptive Scan Range

IEEE Access, 2020
The advances in silicon photonics technology have facilitated the realization of optical network-on-chips (ONoCs) to cope with the physical limitations of metal interconnections in traditional CMOS integrated circuits.
Yong Wook Kim, Jae Hoon Lee, Tae Hee Han
doaj   +1 more source

Current Status of Nonvolatile Semiconductor Memory Technology [PDF]

, 2010
Yoshihisa Fujisaki
openalex   +2 more sources

Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions [PDF]

Nature Communications, 2023
Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals
Wen-Hua Zhu, Yingmei Zhu, Tong Zhou, Xian-Peng Zhang, Hai-An Lin, Q. Cui, Faguang Yan, Ziao Wang, Yongcheng Deng, Hongxin Yang, Lixia Zhao, Igor Žutić, K. Belashchenko, Kaiyou Wang   +13 more
semanticscholar   +1 more source

Novel Pattern-Centric Solution for XtackingTM AFM Metrology

Journal of Microelectronic Manufacturing, 2019
3D NAND (three-dimensional NAND type) has rapidly become the standard technology for enterprise flash memories, and is also gaining widespread use in other applications.
Sicong Wang, Jian Mi, Abhishek Vikram, Gao Xu, Guojie Chen, Liming Zhang, Pan Liu   +6 more
doaj   +1 more source

Ferroelectric memory: state-of-the-art manufacturing and research

Российский технологический журнал, 2020
Semiconductor industry calls for emerging memory, demonstrating high speed (like SRAM or DRAM), nonvolatility (like Flash NAND), high endurance and density, good scalability, reduced energy consumption and reasonable cost.
D. A. Abdullaev, R. A. Milovanov, R. L. Volkov, N. I. Borgardt, A. N. Lantsev, K. A. Vorotilov, A. S. Sigov   +6 more
doaj   +1 more source