Results 191 to 200 of about 2,218,259 (288)

Recent Advances on Thermochromic Inks for Security Applications

Advanced Materials Technologies, EarlyView.
Thermochromic security inks have garnered interest in recent years as security elements for authentication, information encryption, and anti‐counterfeiting. This review outlines different types of thermochromic materials, how they have been developed as functional inks, and how advancements in property enhancement, sustainability, and printing ...
Duarte B. Oliveira, Andreia Araújo, Elvira Fortunato, Rodrigo Martins, Marta C. Corvo, Emanuel Carlos   +5 more
wiley   +1 more source

Unraveling ionic switching dynamics in high-k dielectric double-gate transistors via low-frequency noise spectroscopy. [PDF]

Nano Converg
Jeong S, Han CH, Kwak B, Koo RH, Cho Y, Kim J, Lee JH, Kwon D, Shin W.   +8 more
europepmc   +1 more source

Programmable Dimensional Lithography with Digital Micromirror Devices for Multifunctional Microarchitectures

Advanced Materials Technologies, EarlyView.
This review explores recent advances in digital micromirror device (DMD)‐based lithography, focusing on its programmable light modulation, multi‐material compatibility, and dimensional patterning strategies. It highlights innovations from optical system design to materials integration and multifunctional applications, positioning DMD lithography as a ...
Yubin Lee, Byungcheon Yoo, Chaeyeong Ryu, Jongwon Oh, Dahye Baek, Jiseok Lee   +5 more
wiley   +1 more source

Emerging 2D Ferroelectric Semiconductors: From Fundamentals to Advanced Device Applications. [PDF]

Adv Sci (Weinh)
Chi M, Zhang X, Liu J, Wang Y, Yu A, Guo D, Zhai J.   +6 more
europepmc   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Suwon Seong, T.T. Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
openalex   +1 more source

Lead‐Free Bismuth Halide Perovskite Memristors: Low‐Voltage Switching and Physical Modeling of Resistive Hysteresis

Advanced Materials Technologies, EarlyView.
Lead‐free bismuth halide perovskite memristors exhibit stable low‐voltage resistive switching behavior. The conductance‐activated quasi‐linear memristor model quantitatively reproduces the experimental hysteresis, confirming ion migration‐driven filament dynamics.
So‐Yeon Kim, Gonzalo Rivera‐Sierra, Bitania Shiferaw Mengesha, Benjamin Iniguez, Juan Bisquert   +4 more
wiley   +1 more source

Lateral Semiconductor-Free-Space Gate Transistors. [PDF]

Nano Lett
Maciel García GI, Khandelwal V, Mainali G, Dorantes Paulín V, Sarkar B, Li X.   +5 more
europepmc   +1 more source

Field-effect transistors based on nickel oxide doped with nitrogen semiconductor ferroelectrics for ultralow voltage switch (1 μV), low subthreshold swing and memory

Silviu Vulpe, Mircea Dragoman, Martino Aldrigo, Florin Năstase, Damir Mladenovic, Octavian Ligor, Daniela Dragoman   +6 more
openalex   +1 more source

System considerations for the laser repair of semiconductor memories

, 1983
D.M. Smart
openalex   +2 more sources

Understanding and Circumventing Failure Mechanisms in Chalcogenide Optical Phase Change Material Ge2Sb2Se4Te

Advanced Optical Materials, Volume 13, Issue 8, March 13, 2025.
Chalcogenide optical PCMs have gathered interest for their potential in compact, non‐volatile optics and photonics. Free‐space PCM metasurfaces require new considerations from phase change memory that need to be addressed for reliable scale‐up. Several failure mechanisms pertaining to free‐space PCM devices and layout methods are isolated to prevent ...
Cosmin Constantin Popescu, Kiumars Aryana, Brian Mills, Tae Woo Lee, Louis Martin‐Monier, Luigi Ranno, Jia Xu Brian Sia, Khoi Phuong Dao, Hyung‐Bin Bae, Vladimir Liberman, Steven A. Vitale, Myungkoo Kang, Kathleen A. Richardson, Carlos A. Ríos Ocampo, Dennis Calahan, Yifei Zhang, William M. Humphreys, Hyun Jung Kim, Tian Gu, Juejun Hu   +19 more
wiley   +1 more source