Results 251 to 260 of about 2,218,259 (288)

AI‐Optimized Vanadium Oxide Multilayers for More Than 20‐fold Enhancement in Bolometric Performance

Advanced Science, EarlyView.
Machine‐learning‐optimized WxV1‐xOy multilayer thin films with graded doping achieve a high TCR (7.3 % K−1), reduced hysteresis, and low noise under CMOS‐compatible growth conditions. This approach overcomes the long‐standing trade‐off in microbolometers between linear response and performance, offering a universal bolometric parameter greatly enhanced
Jin‐Hyun Choi, Hyoung‐Taek Lee, Jeonghoon Kim, Miju Park, Seungjoon Sun, Gye‐Hyeon Kim, Myung‐Ho Kwon, Hyeong‐Ryeol Park, Changhee Sohn   +8 more
wiley   +1 more source

Semiconducting Nanomaterials for Intrinsically Stretchable Field-Effect Transistors. [PDF]

Adv Sci (Weinh)
Heo S, Byeon G, Kim S, Zou T, Noh YY.
europepmc   +1 more source

Broadband All‐Optical Memtransistor Based on Organic Cocrystals for Noise‐Robust Motion Recognition

Advanced Science, EarlyView.
This work presents an all‐optical synaptic transistor using DTT‐TCNQ organic charge transfer cocrystals, achieving broadband bidirectional modulation (395–808 nm) with highly linear synaptic plasticity (nonlinearity coefficients αp = 0.00191, αd = 0.00305).
Zhaohui Cai, Yuxiao Fang, Wenjie Du, Zhengjun Liu, Yingli Shi, Jiahua Luo, Rui Wu, Lixing Kang, Chun Zhao   +8 more
wiley   +1 more source

Schottky-gated transistors using chitosan extracted from marine crab. [PDF]

Sci Rep
Fukuhara M, Yokotsuka T, Kobayashi N, Kumadaki M, Fujima N, Hashida T.   +5 more
europepmc   +1 more source

Artificial Neuron Based on Electrical Anisotropy from WSe2 Field Effect Transistors

Advanced Science, EarlyView.
An artificial neuron was realized based on the anisotropic mobility of WSe2. Dendritic and axon‐multisynaptic performance of a neuron was achieved with optical and voltage pulses. Recognition accuracy of handwritten digits was obtained to 97% based on the synaptic weight of an artificial neuron.
Qi Sun, Ping Chen, Kun Lv, Chuanwen Chen, Jinsheng Zhu, Zhiling Chen, Yaxian Lu, Ni Zhang, Zongqian Tan, Tao Lin, Caofeng Pan   +10 more
wiley   +1 more source

Harness of room-temperature polar skyrmion bag in oxide superlattice. [PDF]

Nat Commun
Zhou L, Tanwani M, Tong P, Gupta P, Wu Y, Huang Y, Tian H, Das S, Hong Z.   +8 more
europepmc   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, EarlyView.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source

Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications. [PDF]

Nanomaterials (Basel)
Moore A, Hou Y, Li L.
europepmc   +1 more source

Bio-inspired cross-modal super-additive plasticity for seamless visual processing-in-sensory and -in-memory. [PDF]

Nat Commun
Xiong X, Fu T, Gu C, Li Q, Liu H, Wang X, Kang J, Liu S, Wang Y, Li D, Wang X, Pan A, Wu Y.   +12 more
europepmc   +1 more source

AM-C33: an altermagnetic carbon. [PDF]

Chem Sci
Liao M, Wang Y, Ye P, Wu C, Jiang H, Zhou F, Guan J, Wang F.   +7 more
europepmc   +1 more source