Results 21 to 30 of about 2,218,259 (288)
Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons. [PDF]
Physical Review Letters, 2017 Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced ...
J. Wolters +7 more
semanticscholar +1 more source
Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor
Nature Communications, 2023 Exploring two-dimensional layered ferroelectric semiconductors is highly desired for ferroelectric-based devices. Here, the authors realize the room-temperature ferroelectricity in layered Y-doped γ-InSe due to the microstructure modifications.
F. Sui +7 more
semanticscholar +1 more source
The influence of neutron and gamma radiation on the reliability of magnetic and semiconductor memories [PDF]
Nuclear Technology and Radiation ProtectionThe miniaturization of computer facilities conditioned by the miniaturization of applied components makes them very sensitive to radioactive radiation. This is where neutron and electromagnetic radiation come to the fore.
Kartalović Nenad M. +3 more
doaj +1 more source
Virtualization-Based Efficient TSV Repair for 3-D Integrated Circuits
IEEE Access, 2020 Three-dimensional (3-D) integration offers a promising solution to the technology scaling barriers. Reliability of the 3-D Integrated Circuits (ICs) is highly dependent on the integrity of the underlying interconnect.
Muhammad Imran +5 more
doaj +1 more source
Design Consideration of Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope
IEEE Journal of the Electron Devices Society, 2016 Effect of design parameters including device geometry, doping, and bias on key performance is investigated in a diode-type NAND flash memory cell string working under positive feedback (PF) mechanism. The string has a tube-type poly-Si channel, n+ and p+
Nag Yong Choi +3 more
doaj +1 more source
Nature Communications, 2023 As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the ‘speed-retention-endurance’ dilemma, their typical speed is limited to ~microseconds to milliseconds for ...
Jun Yu +9 more
doaj +1 more source
Nanomaterials, 2021 Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report
Muhammad Naqi +8 more
doaj +1 more source
Human–machine collaboration for improving semiconductor process development
Nature, 2023 One of the bottlenecks to building semiconductor chips is the increasing cost required to develop chemical plasma processes that form the transistors and memory storage cells^ 1 , 2 .
K. J. Kanarik +8 more
semanticscholar +1 more source
Influence of electromagnetic pollution of the electron beam generator and high-energy radioactive source on the memory components [PDF]
Nuclear Technology and Radiation Protection, 2023 The study considers the impact of the environmental contamination by the electromagnetic radiation of electron beam generator and high-energy radioactive source on the memory components. Electron beam generator can be used for injecting particle
Kartalović Nenad M. +3 more
doaj +1 more source
Van der Waals engineering of ferroelectric heterostructures for long-retention memory
Nature Communications, 2021 The memory retention for a ferroelectric field-effect transistor is limited by the depolarization effects and carrier charge trapping. Here, the authors fabricate a long-retention memory cell with a metal-ferroelectric-metal-insulator-semiconductor ...
Xiaowei Wang +12 more
doaj +1 more source