Results 41 to 50 of about 2,218,259 (288)

AlScN: A III-V semiconductor based ferroelectric [PDF]

Journal of Applied Physics, 2018
Ferroelectric switching is unambiguously demonstrated for the first time in a III-V semiconductor based material: Al1-xScxN—A discovery which could help to satisfy the urgent demand for thin film ferroelectrics with high performance and good ...
S. Fichtner, N. Wolff, F. Lofink, L. Kienle, B. Wagner   +4 more
semanticscholar   +1 more source

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

Advancement of science, 2017
Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐
Wen Li, Fengning Guo, Haifeng Ling, Peng Zhang, M. Yi, Laiyuan Wang, Dequn Wu, Linghai Xie, Wei Huang   +8 more
semanticscholar   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

A 2D Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

Advances in Materials, 2023
The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two‐dimensional (2D) materials in recent years.
Jiajia Zha, Yunpeng Xia, Shuhui Shi, Haoxin Huang, Siyuan Li, Chen Qian, Huide Wang, Pengzhan Yang, Zhuomin Zhang, You Meng, Wei Wang, Zhengbao Yang, Hongyu Yu, J. C. Ho, Zhongrui Wang, Chaoliang Tan   +15 more
semanticscholar   +1 more source

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

Advanced Functional Materials, EarlyView.
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang, Xingyue Yang, Zongmeng Yang, Jing Lu, Pin Ho, Wenhong Wang, Yee Sin Ang, Zhenxiang Cheng, Shibo Fang   +8 more
wiley   +1 more source

2D Multifunctional Spin‐Orbit Coupled Dirac Nodal Line Materials

Advanced Functional Materials, EarlyView.
A total of 473 nonmagnetic and antiferromagnetic 2D spin‐orbit coupled Dirac nodal line materials are screened, spanning 5 layer groups and 12 magnetic space groups. Furthermore, it integrates their topological properties with electride, multiferroic, and magnetic characteristics, revealing unique systems with expanded functionalities and promising ...
Weizhen Meng, Ying Liu, Jialin Gong, Yalong Jiao, Xiaoming Zhang, Wenxian Li, Zhenxiang Cheng, Tie Yang   +7 more
wiley   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Break-even point of the phase-flip error correcting code

New Journal of Physics, 2023
In this theoretical study, we explore the use of quantum code-based memories to enhance the lifetime of qubits and exceed the break-even point, which is critical for the implementation of fault-tolerant quantum computing. Specifically, we investigate the
Áron Rozgonyi, Gábor Széchenyi
doaj   +1 more source

Exploring thermally stable metal-oxide/SiO₂ stack for metal oxide semiconductor memory and demonstration of pulse controlled linear response [PDF]

, 2023
Shutaro Asanuma, Kyoko Sumita, Yusuke Miyaguchi, Kazumasa Horita, Takeshi Masuda, Takehito Jimbo, Noriyuki Miyata   +6 more
openalex   +1 more source