Results 61 to 70 of about 2,218,259 (288)

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

Advanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang, Jaerok Kim, Sang‐Min Lee, Sungpyo Baek, Saeroonter Oh, Yoonmyung Lee, Sungjoo Lee   +6 more
wiley   +1 more source

Photoswitching Conduction in Framework Materials

Advanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez, Stefan Hecht, Wolfgang Wenzel, Lars Heinke, Mariana Kozlowska   +4 more
wiley   +1 more source

Tutorial #2: Marriage of Ferroelectric Memories and BEOL-compatible Oxide Semiconductors to Empower Future Integrated Circuits [PDF]

, 2022
Xiao Gong
openalex   +1 more source

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

Advanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu, Hongyi Dou, Jeremy B. Gan, Cun Li, Xuanyu Sheng, Juanjuan Lu, Abhijeet Choudhury, Jialong Huang, Yizhi Zhang, Zhongxia Shang, Ye Cao, Xinghang Zhang, Haiyan Wang   +12 more
wiley   +1 more source

Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

AIP Advances, 2019
A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance ...
Chengyue Xiong, Ziyao Lu, Siqi Yin, Hongming Mou, Xiaozhong Zhang   +4 more
doaj   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

Advanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon, Dong Ho Lee, Seyoung Oh, Jongwon Yoon, Hyo‐Bae Kim, Ji‐Hoon Ahn, Woojin Park, Han Seul Kim, Byungjin Cho   +8 more
wiley   +1 more source

Photophore‐Anchored Molecular Switch for High‐Performance Nonvolatile Organic Memory Transistor

Advanced Science
Over the past decade, molecular‐switch‐embedded memory devices, particularly field‐effect transistors (FETs), have gained significant interest. Molecular switches are integrated to regulate the resistance or current levels in FETs.
Syed Zahid Hassan, Jieun Kwon, Juhyeok Lee, Hye Ryun Sim, Sanghyeok An, Sangjun Lee, Dae Sung Chung   +6 more
doaj   +1 more source

Nano-scale charge trapping memory based on two-dimensional conjugated microporous polymer

Scientific Reports, 2023
There is a growing interest in new semiconductor nanostructures for future high-density high-performance flexible electronic devices. Two-dimensional conjugated microporous polymers (2D-CMPs) are promising candidates because of their inherent ...
Ayman Rezk, Md. Hasan Raza Ansari, Kayaramkodath Chandran Ranjeesh, Safa Gaber, Dayanand Kumar, Areej Merhi, Bilal R. Kaafarani, Mohamed Ben Hassine, Nazek El-Atab, Dinesh Shetty, Ammar Nayfeh   +10 more
doaj   +1 more source

Functional Materials for Environmental Energy Harvesting in Smart Agriculture via Triboelectric Nanogenerators

Advanced Functional Materials, EarlyView.
This review explores functional and responsive materials for triboelectric nanogenerators (TENGs) in sustainable smart agriculture. It examines how particulate contamination and dirt affect charge transfer and efficiency. Environmental challenges and strategies to enhance durability and responsiveness are outlined, including active functional layers ...
Rafael R. A. Silva, Giulio Fatti, Emanuel Carlos, Guilherme Ferreira, Sumita Goswami, Suman Nandy, Luiz H. C. Mattoso, Elvira Fortunato, Caio G. Otoni, Rodrigo Martins   +9 more
wiley   +1 more source

Multicolor Optoelectronic Synapse Enabled by Photon‐Modulated Remote Doping in Solution‐Processed Van Der Waals Heterostructures

Advanced Functional Materials, EarlyView.
Multicolor optoelectronic synapses are realized by vertically integrating solution‐processed MoS2 thin‐film and SWCNT. The electronically disconnected but interactive MoS2 enables photon‐modulated remote doping, producing a bi‐directional photoresponse.
Jihyun Kim, Hyunbin Kim, Gang Jin Cheon, Dohyun Lee, In Soo Kim, Uiyeon Won, Jongseok Lee, Sang Min Won, Joohoon Kang   +8 more
wiley   +1 more source