Results 71 to 80 of about 2,218,259 (288)

Complex Cryptographic and User‐Centric Physically Unclonable Functions Enabled by Strain‐Sensitive Nanocrystals via Selective Ligand Exchange

Advanced Functional Materials, EarlyView.
This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim, Hanseok Seo, Taesung Park, Byung Ku Jung, Junhyeok Park, Young Kyun Choi, Dae Yang Oh, Soong Ju Oh   +7 more
wiley   +1 more source

Thermal Phase‐Modulation of Thickness‐Dependent CVD‐Grown 2D In2Se3

Advanced Functional Materials, EarlyView.
A comprehensive study of CVD‐grown 2D In2Se3 reveals a distinct thickness‐dependent phase landscape and a reversible, thermally driven transformation between β″ and β* variants. In situ TEM electron diffraction and Raman spectroscopy reveal structural dynamics, while the structural invariance of the α‐phase in ultrathin regimes highlights its stability—
Dasun P. W. Guruge, Zhenhuan Chen, Joseph F. S. Fernando, Chao Zhang, Liangzhi Kou, Konstantin L. Firestein, Dmitri V. Golberg   +6 more
wiley   +1 more source

Multiband Switchable Microwave Absorbing Metamaterials Based on Reconfigurable Kirigami–Origami

Advanced Functional Materials, EarlyView.
A reconfigurable metamaterial featuring tunable microwave‐absorbing and load‐bearing performance is proposed. Stretchable kirigami and bistable origami configurations are integrated as actuating components, and the synergistic deformation mechanisms are systematically analyzed.
Weimin Ding, Zhong Zhang, Zeang Zhao, Shengyu Duan, Panding Wang, Xiaogang Guo, Hongshuai Lei, Daining Fang   +7 more
wiley   +1 more source

Environmental factors controlled resistive switching memory behavior based on BiFeO3/Cu2ZnSnSe4 heterojunction

Results in Physics, 2019
With the memory device is required to be widely used in more complex environment, the exploration of new memory device have become a focus of research. Herein, a resistive switching memory device based on BiFeO3(BFO)/Cu2ZnSnSe4(CZTSe) heterostructure is ...
Xiaoxia Li, Bai Sun, Wentao Hou, Jiao Chen, Pingping Zheng, Shuangsuo Mao, Shouhui Zhu, Yudong Xia, Guoqiang Fu   +8 more
doaj   +1 more source

Complementary Logic Driven by Dielectrophoretic Assembly of 2D Semiconductors

Advanced Functional Materials, EarlyView.
Scalable, parallel fabrication of complementary logic gates is demonstrated using electric‐field‐driven deterministic assembly of electrochemically exfoliated 2D n‐type MoS2 and p‐type WSe2 nanosheets. This strategy yields MoS2 and WSe2 transistors featuring average mobilities of 4.3 and 3.0 cm2 V−1 s−1, respectively, and on/off ratios of > 104 ...
Dongjoon Rhee, Okin Song, Ji Yun Park, Yonghyun Albert Kwon, Jae Hyung Kim, In Soo Kim, Zdeněk Sofer, Jeong Ho Cho, Deep Jariwala, Hyesung Park, Joohoon Kang   +10 more
wiley   +1 more source

Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin Film

Advanced Electronic Materials
The development of artificial tactile receptor systems is important in the fields of prosthetic devices, interfaces for the metaverse, and sensors.
Minhyun Jung, Seungyeob Kim, Junghyeon Hwang, Hye Jin Kim, Yunjeong Kim, Jinho Ahn, Sanghun Jeon   +6 more
doaj   +1 more source

New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. [PDF]

Materials (Basel), 2022
Chen YY, Lee FM, Lin YY, Lee CH, Chen WC, Shu CK, Lin SJ, Chang SY, Lu CY.   +8 more
europepmc   +1 more source

Exploiting Two‐Photon Lithography, Deposition, and Processing to Realize Complex 3D Magnetic Nanostructures

Advanced Functional Materials, EarlyView.
Two‐photon lithography (TPL) enables 3D magnetic nanostructures with unmatched freedom in geometry and material choice. Advances in voxel control, deposition, and functionalization open pathways to artificial spin ices, racetracks, microrobots, and a number of additional technological applications.
Joseph Askey, Arjen van den Berg, Sandra Ruiz Gomez, Claire Donnelly, Dirk Grundler, Sam Ladak   +5 more
wiley   +1 more source

Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640. [PDF]

Materials (Basel), 2022
Chen YY, Lin SJ, Chang SY.
europepmc   +1 more source

A ferroelectric fin diode for robust non-volatile memory

Nature Communications
Designing efficient high-density crossbar arrays are nowadays highly demanded for many artificial intelligence applications. Here, the authors propose a two-terminal ferroelectric fin diode non-volatile memory in which a ferroelectric capacitor and a fin-
Guangdi Feng, Qiuxiang Zhu, Xuefeng Liu, Luqiu Chen, Xiaoming Zhao, Jianquan Liu, Shaobing Xiong, Kexiang Shan, Zhenzhong Yang, Q. Bao, Fangyu Yue, Hui Peng, Rong Huang, Xiaodong Tang, Jie Jiang, Wei Tang, X. Guo, Jianlu Wang, A. Jiang, B. Dkhil, Bobo Tian, Junhao Chu, Chungang Duan   +22 more
semanticscholar   +1 more source