Results 91 to 100 of about 59,852 (304)

Tapered-amplified AR-coated laser diodes for Potassium and Rubidium atomic-physics experiments

, 2005
We present a system of room-temperature extended-cavity grating-diode lasers (ECDL) for production of light in the range 760-790nm. The extension of the tuning range towards the blue is permitted by the weak feedback in the cavity: the diodes are anti ...
A. Aspect, B. Villier, D. Sacchet, F. Moron, G. Varoquaux, P. Bouyer, R. A. Nyman, Shaffer J., Y. Le Coq   +8 more
core   +4 more sources

Heterogeneous Silicon/III–V Semiconductor Optical Amplifiers

IEEE Journal of Selected Topics in Quantum Electronics, 2016
We report high output power and high-gain semiconductor optical amplifiers integrated on a heterogeneous silicon/III–V photonics platform. The devices produce 25 dB of unsaturated gain for the highest gain design, and 14 dBm of saturated output power for the highest output power design.
Davenport, Michael L, Skendi, Sandra, Volet, Nicolas, Hulme, Jared C, Heck, Martijn JR, Bowers, John E   +5 more
openaire   +3 more sources

Investigation of Halogen Substitution Effects in π‐Conjugated Organic Ligands of Chiral Hybrid Perovskites on Their Chiroptical Activity

Advanced Functional Materials, EarlyView.
The role of novel thiophene‐based ligands with halogen substitutions in enhancing the chiroptical and optoelectronic properties of 2D chiral HOIPs has been investigated. By tailoring ligand design, enhanced CD and CPL properties are achieved, with improved CPL discrimination in photodetectors.
Boesung Kwon, Doyeong Yeo, In‐Chul Hwang, In Hwan Jung, Joon Hak Oh   +4 more
wiley   +1 more source

Off-set Filtering Effect in SOA Based Optical Access Network [PDF]

Radioengineering, 2016
In-line and reflective semiconductor optical amplifiers (SOA and RSOA) can be effectively utilized as external optical intensity modulators. However the limited modulation bandwidth affects the application possibilities, because next generation access ...
E. Udvary
doaj  

III-V-on-silicon photonic devices for optical communication and sensing [PDF]

, 2015
In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing.
Abbasi, Amin, Baets, Roel, Bauwelinck, Johan, Cardile, Paolo, Dave, Utsav Deepak, De Groote, Andreas, De Koninck, Yannick, Dhoore, Sören, Fu, Xin, Gassenq, Alban, Hattasan, Nannicha, Huang, Qiangsheng, Keyvaninia, Shahram, Kumari, Sulakshna, Kuyken, Bart, Li, Lianyan, Mechet, Pauline, Morthier, Geert, Muneeb, Muhammad, Roelkens, Günther, Sanchez, Dorian, Shao, Haifeng, Spuesens, Thijs, Subramanian, Ananth, Tassaert, Martijn, UVIN, SARAH, van Campenhout, J., Van Gasse, Kasper, Van Thourhout, Dries, Verbist, Jochem, Wang, Ruijun, Wang, Zhechao, Yin, Xin, Zhang, Jing   +33 more
core   +4 more sources

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

Advanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun, Byeong Gwan Kim, Min Seo Kang, Ui Gwan Shin, Minjae Kim, Kiyung Kim, Hae‐Won Lee, Yongsu Lee, Byoung Hun Lee   +8 more
wiley   +1 more source

All-Optical Broadband QDs Semiconductor Optical Amplifier (QDs-SOA): Inhomogeneous Broadening

IEEE Access
The escalating demand for increased traffic capacity and bandwidth in communication networks has spurred the exploration of innovative solutions. This article delves into the promising features of Quantum Dot Semiconductor Optical Amplifiers (QD-SOAs ...
Mahdiyeh Eyvazi, Reza Yadipour, Ali Rostami   +2 more
doaj   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li, Zhitian Ling, Pawel Czulkin, Paul W. M. Blom, Wojciech Pisula, Tomasz Marszalek   +5 more
wiley   +1 more source

Performance analysis of 2R optical regeneration by cross gain compression using multiple quantum well semiconductor optical amplifiers

Dyna, 2017
This paper presents the performance analysis of a system configuration for 2R optical regeneration (re-amplification and re-shaping), which is based on Cross-Gain Compression (XGC) and Cross-Gain Modulation (XGM), which is configured on a Multiple ...
Victor H. Perilla-Martinez, Gustavo A. Puerto-Leguizamón, Carlos A. Suárez-Fajardo   +2 more
doaj   +1 more source

Observation of Two‐Photon Resonant Raman Scattering via the Biexciton Level in Two‐Dimensional Halide Perovskite (C6H5C2H4NH3)2PbI4

Advanced Functional Materials, EarlyView.
Efficient two‐photon resonant Raman scattering (TRRS) is observed in the layered perovskite (PEA)2PbI4, with the biexciton level acting as an intermediate state. TRRS undergoes two‐photon frequency shift upon input frequency tuning, persists up to 90 K, and shows clear threshold behavior and polarization selection rules.
Seung Han Shin, Seo Hyun Nam, Jeehong Park, Dong Gyu Lee, Jeong Bin Cho, Tae Jung Kim, Yeonjin Yi, Joon Ik Jang   +7 more
wiley   +1 more source