Results 1 to 10 of about 177,626 (181)
Thallium bromide quantum dot structure
This work studies the thallium halogenide TlBr/TlBrxCl1-x quantum dot (QD) semiconductor structure and specifies its optical gain. This QD structure is very few studied.
Khamael Ibrahim +3 more
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Single-Electron Transport and Detection of Graphene Quantum Dots
The integrated structure of graphene single-electron transistor and nanostrip electrometer was prepared using the semiconductor fabrication process. Through the electrical performance test of the large sample number, qualified devices were selected from ...
Xinxing Li, Jinggao Sui, Jingyue Fang
doaj +1 more source
Plasmon enhanced optical Kerr susceptibility of quantum dots
A significant gain in optical Kerr susceptibility of semiconductor quantum systems is of great importance for enabling nonlinear optical devices for the applications such as optical switches and high-density on-chip integration.
Guanghui Liu +6 more
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Solar cells that are based on the implementation of quantum dots in the intrinsic region, so-called intermediate band solar cells (IBSCs), are among the most widely used concepts nowadays for achieving high solar conversion efficiency.
Asmae El Aouami +8 more
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InGaAsSb/GaAsSb quantum dot structures
Abstract This work studies the modal gain from quaternary quantum dots (QD) structures at different mole fractions of the structure. The quaternary structures are more flexible in attaining lattice‐matching systems. First, the In‐ and As‐mole fractions are varied.
Mushtaq Obaid Oleiwi +3 more
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We present a theoretical atomistic study of the optical properties of non-toxic InX (X = P, As, Sb) colloidal quantum dot arrays for application in photovoltaics.
Rebeca V. H. Hahn +5 more
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Copper sulfide (CuS) is a semiconductor widely used for quantum dot sensitized solar cell applications due to its photocatalytic activity. The hydrothermal technique was used to synthesize the copper sulfide quantum dots.
G. Vinoth +3 more
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Finite bias charge detection in a quantum dot [PDF]
We present finite bias measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transconductance signal measured in the quantum point contact at finite dot bias shows structure which allows us to ...
Driscoll, D. C. +5 more
core +1 more source
Quantum Dot Laser for a Light Source of an Athermal Silicon Optical Interposer
This paper reports a hybrid integrated light source fabricated on a silicon platform using a 1.3 μm wavelength quantum dot array laser. Temperature insensitive characteristics up to 120 °C were achieved by the optimum quantum dot structure and laser ...
Nobuaki Hatori +7 more
doaj +1 more source
In this work, total (linear and nonlinear) optical absorption from InTl1−xSbx QD structures was studied. It is shown that these Tl-based QD structures have high absorption at long wavelengths. Nonlinear absorption at high power levels was preferred at some slow-light applications.
B. Al-Nashy +3 more
openaire +2 more sources

