Results 51 to 60 of about 5,951 (304)
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
S.252-255Birefringence in polarization insensitive semiconductor-optical amplifiers is investigated by four-wave mixing.
Schmidt, C. +9 more
core
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Optical Label Switching Functionalities Employing Semiconductor Optical Amplifiers
Optical labelling of data packets enables high router throughputs. Semiconductor optical amplifiers (SOAs) are key building blocks to implement the functionalities required for fast optical label ...
Vegas Olmos, J.J. +23 more
core +1 more source
Analysis of bit rate dependence up to 80 Gbit/s of a simple wavelength converter based on XPM in a SOA and a shifted filtering [PDF]
This paper provides the analysis of wavelength converted pulses obtained with a simple semiconductor optical amplifier (SOA)-based wavelength conversion scheme, which exploits cross phase modulation (XPM) in an SOA in conjunction with shifted filtering.
Anandarajah, Prince M. +14 more
core +1 more source
Calibration of an InP-Based Monolithically Integrated Optical Pulse Shaper
We present the calibration method and characterization of a monolithically integrated semiconductor optical pulse shaper. The photonic integrated circuit has been realized in an InP-based generic photonic foundry process.
M. S. Tahvili +5 more
doaj +1 more source
Unraveling the Electronic Structure of Silicon Vacancy Centers in 4H‐SiC
The electronic structure of the silicon vacancy in 4H‐SiC is probed via transient absorption spectroscopy, uncovering previously inaccessible excited states of the quartet and doublet spin channels, including the V2' transition. In combination with theoretical analysis, a comprehensive picture of the electronic structure is established.
Ali Tayefeh Younesi +9 more
wiley +1 more source
Semiconductor laser optical amplifiers in switching and distribution networks
S.59-74Applications of semiconductor laser optical amplifiers in coherent multichannel systems are investigated with respect to the switching and distribution of many channels to a large number of customers.
Grosskopf, G. +4 more
core +1 more source
Numerical Investigation of Optical Burst Switching
The simulation analysis of aphysical layer of the "all optical burst switching" using aVPI Photonics™ simulation program is presented in this article. The optical burst networks adopt dedicated control channel to transmit headers of burst, at the same ...
Milan Dado +3 more
doaj +1 more source
Blood Biomarkers and Surface‐Enhanced Raman Spectroscopy for Gout: A Comprehensive Review
Schematic illustrating gout disease progression from asymptomatic hyperuricemia to chronic tophaceous disease, highlighting the limitations of conventional imaging and biochemical diagnostics and the potential of engineered SERS platforms for ultrasensitive blood‐based detection of urate‐related biomarkers across disease stages, with the color gradient
Isuri Perera +6 more
wiley +1 more source

