Results 101 to 110 of about 308,424 (390)

Discovery of an Intrinsic Antiferromagnetic Semiconductor EuSc2Te4 With Magnetism‐Driven Nonlinear Transport

open access: yesAdvanced Functional Materials, EarlyView.
EuSc₂Te₄, an antiferromagnetic semiconductor, exhibits a nonlinear Hall effect (NLHE) characterized by quadratic current–voltage behavior. Combined experimental and theoretical studies reveal that this NLHE is linked to its antiferromagnetism and involves contributions from the quantum metric.
Seng Huat Lee   +15 more
wiley   +1 more source

Laser gain spectra of quantum wells and multiplasmon optical transitions

open access: yesMoldavian Journal of the Physical Sciences, 2005
A novel multi-plasmon concept of a light absorption and laser gain of low-dimensional structures are comprehensively discussed. A Generalized Semiconductor Bloch Equations are derived with account of multi-plasmon optical transitions ...
Gurău, Virginia
doaj  

Pump-probe detuning dependence of four-wave mixing pulse in an SOA [PDF]

open access: yes, 2007
Four-wave mixing (FWM) between 2-ps pulses in a multiquantum-well semiconductor optical amplifier (SOA) is presented. The conjugate pulses are fully characterized using the frequency-resolved optical gating technique.
Barry, Liam P.   +2 more
core   +1 more source

Solution‐Processable and Ambient‐Stable Highly Conductive p‐Type Polymers Derived from Dihydropyrazine and Ethylenedioxythiophene

open access: yesAdvanced Functional Materials, EarlyView.
This work presents π–conjugated polymers based on dihydropyrazine (DHP) and ethylenedioxythiophene (EDOT), developed to produce highly conductive, flexible films for printed electronics. By optimizing the DHP and EDOT ratio, strong and compact π–π stacking is achieved, resulting in polymer films with conductivities up to 1700 S cm−1 under ambient ...
Sung Jae Jeon   +3 more
wiley   +1 more source

Time-Resolved Studies of a Rolled-Up Semiconductor Microtube Laser

open access: yes, 2009
We report on lasing in rolled-up microtube resonators. Time-resolved studies on these semiconductor lasers containing GaAs quantum wells as optical gain material reveal particularly fast turn-on-times and short pulse emissions above the threshold.
Fehringer, S.   +8 more
core   +1 more source

Method for measuring reflectance of semiconductor disk laser gain element under optical pump excitation [PDF]

open access: yes, 2011
We present a new measurement method for measuring the spectral reflectance of a semiconductor disk laser gain element under optical pumping, providing valuable information on the spectral dependence of gain under close-to-normal operating ...
Bellancourt   +5 more
core   +1 more source

High‐Entropy Liquid Metal Process for Transparent Ultrathin p‐Type Gallium Oxide

open access: yesAdvanced Functional Materials, EarlyView.
This work introduces a doping strategy for harvesting ultrathin Ga oxide layers using a multi‐elemental Ga‐based liquid metal alloy. The incorporation of trivalent In metal into the self‐limiting oxide formed on the alloy's surface is enabled by the existence of atomically dispersed Pt, Au, and Pd.
Laetitia Bardet   +14 more
wiley   +1 more source

Optical gain in GaAsBi/GaAs quantum well diode lasers

open access: yesScientific Reports, 2016
Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devices where, by use of the unusual band structure properties of GaAsBi alloys, it is possible to suppress the dominant energy-consuming Auger recombination ...
I. Marko   +8 more
semanticscholar   +1 more source

Optical Spectral Singularities as Threshold Resonances

open access: yes, 2011
Spectral singularities are among generic mathematical features of complex scattering potentials. Physically they correspond to scattering states that behave like zero-width resonances.
Mostafazadeh, Ali
core   +1 more source

Self‐Poled Halide Perovskite Ruddlesden‐Popper Ferroelectric‐Photovoltaic Semiconductor Thin Films and Their Energy Harvesting Properties

open access: yesAdvanced Functional Materials, EarlyView.
Low‐dimensional halide perovskite thin films, (BA)2(MA)n‐1PbnBr3n+1 (n = 1, 2), exhibit both semiconducting and ferroelectric properties, enabling mechanical and light energy harvesting. Using Cr/Cr₂O₃ or PCBM as barrier layers ensures reproducible ferroelectricity.
Raja Sekhar Muddam   +8 more
wiley   +1 more source

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