Results 131 to 140 of about 308,424 (390)

All-Optical Logic Based on Ultrafast Gain and Index Dynamics in a Semiconductor Optical Amplifier [PDF]

, 2004
H.J.S. Dorren, Xuelin Yang, Arvind Kumar Mishra, Ziqi Li, Heongkyu Ju, H. de Waardt, G.D. Khoe, T. Simoyama, Hiroshi Ishikawa, Hitoshi Kawashima, Toshifumi Hasama   +10 more
openalex   +1 more source

Compositing Effect Leads to Extraordinary Performance in GeSe‐Based Thermoelectrics

Advanced Functional Materials, EarlyView.
Rhombohedral GeSe is rationally designed with (GeSe)0.9(AgBiTe2)0.1‐1.5 mol.% SnSe, achieving a peak ZT of 1.31 at 623 K. Forming a composite with SnSe establishes interfaces with strong phonon scattering and weak electron scattering. Multiscale defects lead to an ultra‐low lattice thermal conductivity (0.26 W m−1 K−1), approaching the amorphous limit.
Min Zhang, Xiao‐Lei Shi, Siqi Liu, Raza Moshwan, Tianyi Cao, Wenyi Chen, Yongqi Chen, Meng Li, Chenyang Zhang, Nanhai Li, Boxuan Hu, Wanyu Lyu, Wei‐Di Liu, Guihua Tang, Zhi‐Gang Chen   +14 more
wiley   +1 more source

All-Optical Broadband QDs Semiconductor Optical Amplifier (QDs-SOA): Inhomogeneous Broadening

IEEE Access
The escalating demand for increased traffic capacity and bandwidth in communication networks has spurred the exploration of innovative solutions. This article delves into the promising features of Quantum Dot Semiconductor Optical Amplifiers (QD-SOAs ...
Mahdiyeh Eyvazi, Reza Yadipour, Ali Rostami   +2 more
doaj   +1 more source

FDTD Simulation of the Nonlinear Gain Dynamics in Active Optical Waveguides and Semiconductor Microcavities [PDF]

, 2004
G. Slavcheva, John M. Arnold, Richard W. Ziolkowski   +2 more
openalex   +1 more source

Quantum-well capture and interwell transport in semiconductor active layers [PDF]

, 1999
The dynamics of electrons and holes in multiquantum-well semiconductor gain media involves several different transport processes, such as diffusion and drift across the barrier region, as well as capture and escape transitions between the bound and the ...
Hunziker, G., Paiella, R., Vahala, K. J.
core  

Integration of Perovskite/Low‐Dimensional Material Heterostructures for Optoelectronics and Artificial Visual Systems

Advanced Functional Materials, EarlyView.
Heterojunctions combining halide perovskites with low‐dimensional materials enhance optoelectronic devices by enabling precise charge control and improving efficiency, stability, and speed. These synergies advance flexible electronics, wearable sensors, and neuromorphic computing, mimicking biological vision for real‐time image analysis and intelligent
Yu‐Jin Du, Junjie Yang, Ziyu Lv, Yongbiao Zhai, Zezhuang Yi, Yuhui Xie, Ming‐Lin Zheng, Xiangyu Ma, Guodong Gong, Yan Wang, Ye Zhou, Su‐Ting Han   +11 more
wiley   +1 more source

Cross-gain modulation in broad-area vertical-cavity semiconductor optical amplifier [PDF]

, 2005
Francesco Marino, Luca Furfaro, S. Balle
openalex   +1 more source

Cascaded wavelength conversions using four-wave mixing in semiconductor optical amplifiers [PDF]

, 1997
Wavelength conversion in wavelength-division multiplexed (WDM) communication systems would provide significant network performance improvement. Optoelectronic, cross-gain saturation, and cross phase saturation wavelength converters are candidate ...
Geraghty, David F., Koren, Uzi, Lee, Robert B., Vahala, Kerry J.   +3 more
core  

Engineering Strategies for 2D Layered Tin Halide Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
2D halide perovskites are promising candidates for field‐effect transistor (FET) applications due to their high stability and suppressed ion migration in the presence of bulky organic spacers. This review systematically summarizes the optimization engineering strategies of 2D perovskite FETs and future challenges, which provide guidance for developing ...
Shuanglong Wang, Zhitian Ling, Paul W. M. Blom, Tomasz Marszalek, Wojciech Pisula   +4 more
wiley   +1 more source

Mechanically induced optical loss mechanism due to thermal expansion coefficient mismatch in micro-cavities with all-around stressor layers

APL Photonics
Various excitation-induced loss mechanisms have been identified during the development of direct-gap semiconductor lasers. Recently, indirect-gap laser sources, particularly germanium (Ge) or GeSn based, have emerged due to silicon industry compatibility.
Abdelrahman Z. Al-Attili, Daniel Burt, Tasmiat Rahman, Zuo Li, Naoki Higashitarumizu, Frederic Y. Gardes, Yasuhiko Ishikawa, Shinichi Saito   +7 more
doaj   +1 more source