Results 241 to 250 of about 308,424 (390)
[001]‐oriented Sb2Se3 film with improved crystallinity and adjusted composition is achieved via a new thermal treatment approach consisting of preliminary annealing of the Sb layer before its selenization. The findings of this work demonstrate enhanced charge carriers' transportation, a stable performance, and an improvement of H2 generation from ...
Magno B. Costa+7 more
wiley +1 more source
Half-wave nanolasers and intracellular plasmonic lasing particles. [PDF]
Cho S, Martino N, Yun SH.
europepmc +1 more source
Wavelength Conversion Based on Cross-Gain Modulation in a Semiconductor Optical Amplifier
Hiroyuki Uenohara
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Low‐Symmetry Weyl Semimetals: A Path to Ideal Topological States
This study presents a theoretical framework for realizing ideal Weyl semimetals, where Weyl nodes are well‐isolated at the Fermi level. The approach is exemplified in the low‐symmetry material Cu2SnSe3, which exhibits tunable topological phases, current‐induced orbital magnetization, and a strong circular photogalvanic effect, making it a promising ...
Darius‐Alexandru Deaconu+3 more
wiley +1 more source
High-Gain PMMA-Modified Graphene Photodetectors for Dual-Wavelength Secure Communication Utilizing Distinct Temporal Photoresponses. [PDF]
Wu J+5 more
europepmc +1 more source
Modulating Oxide‐Based Quantum Materials by Ion Implantation
This review highlights how ion implantation, a well developed chip‐technology, enables targeted modulation of oxide‐based quantum materials. This includes tuning of metal‐insulator transitions, magnetism, and superconductivity through selective doping, defect creation, and induced lattice strain. Abstract Ion implantation has emerged as a powerful tool
Andreas Herklotz+2 more
wiley +1 more source
Se-mediated dry transfer of wafer-scale 2D semiconductors for advanced electronics. [PDF]
Zhang X+12 more
europepmc +1 more source
All-Optical Inverted Triode Based on Cross-Gain Modulation in a Semiconductor Optical Amplifier
Yoshinobu Maeda, Yoshinobu Kondo
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Herein, the synthesis of Ta₂Pd₃S₈ nanowires is reported via scalable liquid cascade exfoliation and their integration into high‐mobility field‐effect transistors (FETs) and sensitive photodetectors, achieving carrier mobility of up to 27.3 cm2 V⁻¹ s⁻¹ and responsivities of 322.40 A W⁻¹ and 1.85 mA W⁻¹ for single nanowire and network devices ...
Kyung Hwan Choi+13 more
wiley +1 more source