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Broadband Tunable Optical Gain from Ecofriendly Semiconductor Quantum Dots with Near-Half-Exciton Threshold.

Nano letters (Print), 2023
Optical gain in solution-processable quantum dots (QDs) has attracted intense interest toward next-generation optoelectronics; however, the development of optical gain in heavy-metal-free QDs remains challenging.
Zhigao Huang   +5 more
semanticscholar   +1 more source

Optical gain in semiconductors

Journal of Luminescence, 1973
Abstract Direct measurements of optical gain in semiconductors give information on the stimulated recombination process that cannot be easily obtained from an oscillating semiconductor laser. The effects of various material parameters on the gain and saturation factors can be easily studied.
K.L. Shaklee, R.E. Nahory, R.F. Leheny
openaire   +1 more source

Gain-enhanced optical coherence in a high optical gain semiconductor

Physics Letters A, 2012
Abstract The propagation of ultrashort pulses in a traveling wave semiconductor amplifier is considered. It is demonstrated that the effective polarization relaxation time, which determines the coherence of the interaction of pulses within the medium, strongly depends on its optical gain.
Peter P. Vasilʼev, Ian H. White
openaire   +1 more source

Optical gain in GaN based semiconductors

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C, 2002
Since successful lasing has been reported for wurtzite (WZ) GaN and related materials, researchers are now interested in exploring the possibility of reducing the threshold current density (Jth). In this paper, we focus on this point by calculating the optical gain.
K. Domen   +3 more
openaire   +1 more source

Electrical Switching of Optical Gain in Perovskite Semiconductor Nanocrystals

Nano Letters, 2021
Perovskite semiconductor nanocrystals are promising for optical amplification and laser applications benefiting from efficient optical gain generation. Nevertheless, the pump threshold is limited by more than one exciton per nanocrystal required to generate population inversion in neutral nanocrystals due to the level degeneracy.
Zhengyuan Qin   +5 more
openaire   +2 more sources

Semiconductor optical amplifier length effects on gain dynamics

Journal of Physics D: Applied Physics, 2003
We study theoretically semiconductor optical amplifier (SOA) length effects on gain dynamics when a short saturating pulse (pump) is either co- or counter-propagative with the probe. More specifically, we focus our attention on SOA recovery dynamics and gain overshoot.
Ginovart, Frédéric, Simon, Jean-Claude
openaire   +1 more source

Gain dynamics studies of a semiconductor optical amplifier

Journal of Optics A: Pure and Applied Optics, 2002
We study theoretically gain recovery dynamics in a semiconductor optical amplifier (SOA) when a short saturating pulse (pump) is either co-propagative or counter-propagative with the probe. An explanation of the gain overshoot in the temporal dynamics of the SOA gain is given. Analyses of high input probe power and injected current effects are included.
Ginovart, Frédéric, Simon, Jean-Claude
openaire   +1 more source

Recent Advances in 100+nm Ultra-Wideband Fiber-Optic Transmission Systems Using Semiconductor Optical Amplifiers

Journal of Lightwave Technology, 2020
We report on the use of semiconductor optical amplifiers (SOAs) to extend the optical bandwidth of next generation optical systems to 100 nm and beyond.
J. Renaudier   +14 more
semanticscholar   +1 more source

Gain stabilization of semiconductor optical amplifiers

Canadian Journal of Electrical and Computer Engineering, 1991
Gain stabilization has been achieved for semiconductor optical amplifiers through the use of a feedback control system which dynamically adjusts the amplifier drive current. Measured results show that amplifier gain variations created by changes in input signal polarization, wavelength and amplifier chip temperature have been reduced to 0.1 dB.
R. A. Morris   +2 more
openaire   +1 more source

OPTICAL GAIN OF HEAVILY DOPED SEMICONDUCTORS

Soviet Journal of Quantum Electronics, 1972
A calculation is given of the optical gain resulting from band?band transitions in a heavily doped semiconductor. Analytic expressions, applicable in a wide range of temperatures and impurity concentrations, are obtained for the electron and hole quasi-Fermi levels. Qualitative features of the results obtained are discussed.
A G Aleksanyan   +2 more
openaire   +1 more source

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