Results 311 to 320 of about 308,424 (390)

Optical gain in GaN based semiconductors

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C, 2002
Since successful lasing has been reported for wurtzite (WZ) GaN and related materials, researchers are now interested in exploring the possibility of reducing the threshold current density (Jth). In this paper, we focus on this point by calculating the optical gain.
K. Domen, Akito Kuramata, T. Tanahashi, K. Horino   +3 more
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Gain recovery in semiconductor optical amplifiers

Optics Communications, 2008
Pump–probe measurements are presented of gain compression and recovery in a series of four semiconductor optical amplifiers of different lengths but otherwise identical structures. A continuous wave probe beam from a tunable laser is used to measure the wavelength dependence of gain compression and recovery times.
Li, X, Adams, MJ, Alexandropoulos, D, Lealman, IF   +3 more
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Gain dynamics studies of a semiconductor optical amplifier

Journal of Optics A: Pure and Applied Optics, 2002
We study theoretically gain recovery dynamics in a semiconductor optical amplifier (SOA) when a short saturating pulse (pump) is either co-propagative or counter-propagative with the probe. An explanation of the gain overshoot in the temporal dynamics of the SOA gain is given. Analyses of high input probe power and injected current effects are included.
Ginovart, Frédéric, Simon, Jean-Claude
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Cross gain saturation in semiconductor optical amplifier [PDF]

Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243), 2002
We have carried out gain saturation experiments using pulsed pump and probe beams derived from gain switched DFB semiconductor optical amplifier lasers. The widths of both pump and probe pulses were 35 ps. The gain saturation of the probe takes place only when there is temporal overlap of the pump and probe beams in the amplifier.
C. Wu, H. Fan, U. Koren, N.K. Dutta, Chih-Hsiao Chen   +4 more
openaire   +1 more source

Cross-Gain Compression in Semiconductor Optical Amplifiers

Journal of Lightwave Technology, 2007
In this paper, we present a novel scheme that exploits cross-gain modulation (XGM) in semiconductor optical amplifiers (SOAs) without overall pattern effects. This technique uses two signals with reversed-intensity modulation and different wavelength to exploit propagation and gain-compression dynamics in gain-saturated SOAs at almost constant overall ...
CONTESTABILE, GIAMPIERO, R. PROIETTI, N. CALABRETTA, CIARAMELLA, ERNESTO   +3 more
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Gain stabilization of semiconductor optical amplifiers

Canadian Journal of Electrical and Computer Engineering, 1991
Gain stabilization has been achieved for semiconductor optical amplifiers through the use of a feedback control system which dynamically adjusts the amplifier drive current. Measured results show that amplifier gain variations created by changes in input signal polarization, wavelength and amplifier chip temperature have been reduced to 0.1 dB.
C. G. Englefield, R. A. Morris, P. A. Goud   +2 more
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Optical gain and saturation characteristics of quantum-dot semiconductor optical amplifiers

, 2003
Detailed theoretical analysis of the gain characteristics of quantum-dot semiconductor optical amplifiers (QD-SOA) is presented. An analytical expression for the optical gain is derived from the quantum dot and wetting layer rate equations.
O. Qasaimeh
semanticscholar   +1 more source

OPTICAL GAIN OF HEAVILY DOPED SEMICONDUCTORS

Soviet Journal of Quantum Electronics, 1972
A calculation is given of the optical gain resulting from band?band transitions in a heavily doped semiconductor. Analytic expressions, applicable in a wide range of temperatures and impurity concentrations, are obtained for the electron and hole quasi-Fermi levels. Qualitative features of the results obtained are discussed.
A G Aleksanyan, I A Poluéktov, Yurii M Popov   +2 more
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Gain saturation effects in a cascade of semiconductor optical amplifiers [PDF]

24th European Conference on Optical Communication. ECOC '98 (IEEE Cat. No.98TH8398), 2002
The minimisation of the effects of gain saturation in a cascade of 1310 nm semiconductor optical amplifiers is analysed and compared to the data obtained from an all optical link between Madrid and Lisbon.
SETTEMBRE M, MATERA F, TAMBURRINI W, MECOZZI, ANTONIO, REID J. J. E, KUINDERSMA P. I, HAUNSTEIN H.   +6 more
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Optical phase conjugation with gain in a bulk semiconductor

Proceedings of SPIE, 1995
ABSTRACT We experimentally demonstrate a method of high-speed optical amplification using degenerate four-wavemixing in a bulk semiconductor, CdTe. In our experiment, both transmitted probe and phase-conjugate beamsare amplified in accordance with theory.
Prem Kumar, David O. Caplan
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