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Nano letters (Print), 2023
Optical gain in solution-processable quantum dots (QDs) has attracted intense interest toward next-generation optoelectronics; however, the development of optical gain in heavy-metal-free QDs remains challenging.
Zhigao Huang +5 more
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Optical gain in solution-processable quantum dots (QDs) has attracted intense interest toward next-generation optoelectronics; however, the development of optical gain in heavy-metal-free QDs remains challenging.
Zhigao Huang +5 more
semanticscholar +1 more source
Optical gain in semiconductors
Journal of Luminescence, 1973Abstract Direct measurements of optical gain in semiconductors give information on the stimulated recombination process that cannot be easily obtained from an oscillating semiconductor laser. The effects of various material parameters on the gain and saturation factors can be easily studied.
K.L. Shaklee, R.E. Nahory, R.F. Leheny
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Gain-enhanced optical coherence in a high optical gain semiconductor
Physics Letters A, 2012Abstract The propagation of ultrashort pulses in a traveling wave semiconductor amplifier is considered. It is demonstrated that the effective polarization relaxation time, which determines the coherence of the interaction of pulses within the medium, strongly depends on its optical gain.
Peter P. Vasilʼev, Ian H. White
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Optical gain in GaN based semiconductors
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C, 2002Since successful lasing has been reported for wurtzite (WZ) GaN and related materials, researchers are now interested in exploring the possibility of reducing the threshold current density (Jth). In this paper, we focus on this point by calculating the optical gain.
K. Domen +3 more
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Electrical Switching of Optical Gain in Perovskite Semiconductor Nanocrystals
Nano Letters, 2021Perovskite semiconductor nanocrystals are promising for optical amplification and laser applications benefiting from efficient optical gain generation. Nevertheless, the pump threshold is limited by more than one exciton per nanocrystal required to generate population inversion in neutral nanocrystals due to the level degeneracy.
Zhengyuan Qin +5 more
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Semiconductor optical amplifier length effects on gain dynamics
Journal of Physics D: Applied Physics, 2003We study theoretically semiconductor optical amplifier (SOA) length effects on gain dynamics when a short saturating pulse (pump) is either co- or counter-propagative with the probe. More specifically, we focus our attention on SOA recovery dynamics and gain overshoot.
Ginovart, Frédéric, Simon, Jean-Claude
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Gain dynamics studies of a semiconductor optical amplifier
Journal of Optics A: Pure and Applied Optics, 2002We study theoretically gain recovery dynamics in a semiconductor optical amplifier (SOA) when a short saturating pulse (pump) is either co-propagative or counter-propagative with the probe. An explanation of the gain overshoot in the temporal dynamics of the SOA gain is given. Analyses of high input probe power and injected current effects are included.
Ginovart, Frédéric, Simon, Jean-Claude
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Journal of Lightwave Technology, 2020
We report on the use of semiconductor optical amplifiers (SOAs) to extend the optical bandwidth of next generation optical systems to 100 nm and beyond.
J. Renaudier +14 more
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We report on the use of semiconductor optical amplifiers (SOAs) to extend the optical bandwidth of next generation optical systems to 100 nm and beyond.
J. Renaudier +14 more
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Gain stabilization of semiconductor optical amplifiers
Canadian Journal of Electrical and Computer Engineering, 1991Gain stabilization has been achieved for semiconductor optical amplifiers through the use of a feedback control system which dynamically adjusts the amplifier drive current. Measured results show that amplifier gain variations created by changes in input signal polarization, wavelength and amplifier chip temperature have been reduced to 0.1 dB.
R. A. Morris +2 more
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OPTICAL GAIN OF HEAVILY DOPED SEMICONDUCTORS
Soviet Journal of Quantum Electronics, 1972A calculation is given of the optical gain resulting from band?band transitions in a heavily doped semiconductor. Analytic expressions, applicable in a wide range of temperatures and impurity concentrations, are obtained for the electron and hole quasi-Fermi levels. Qualitative features of the results obtained are discussed.
A G Aleksanyan +2 more
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