Results 331 to 340 of about 319,656 (388)

Gain and phase recovery of optically excited semiconductor optical amplifiers

IEEE Photonics Technology Letters, 2006
An investigation of the recovery dynamics of semiconductor optical amplifiers (SOAs) explains why the ultrafast component of the gain recovery is largely absent in the phase response. The time-resolved gain and phase dynamics of a bulk GaInAs SOA are measured using a pump-probe technique and differences between the gain and phase recoveries are ...
R. Giller, R.J. Manning, D. Cotter
openaire   +1 more source

Scaling Capacity Growth of Fiber-Optic Transmission Systems Using 100+nm Ultra-Wideband Semiconductor Optical Amplifiers

Journal of Lightwave Technology, 2019
We report on the use of semiconductor optical amplifiers (SOAs) to extend the optical bandwidth of next generation optical systems. After discussing the technological progress and the motivation for rekindling the interest in SOAs for line amplification,
J. Renaudier, A. Ghazisaeidi
semanticscholar   +1 more source

All-Optical Signal Processing Using Gain Clamped Semiconductor Optical Amplifiers

2007 9th International Conference on Transparent Optical Networks, 2007
All optical signal processing is a key functionality to ensure the operation and growth of wavelength division multiplexing (WDM) networks. In this work we present a review of nonlinear applications of gain clamped semiconductor optical amplifiers (GC-SOA). An overview on recent results of wavelength conversion, signal reshaping, format conversion, and
Tiago Silveira, Antonio Teixeira, Ana Ferreira, Giorgio Tosi Beleffi, Davide Forin, Sergio Stevan, Paulo Monteiro   +6 more
openaire   +1 more source

High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate

ACS Photonics, 2019
High gain and high saturation output power silicon-based semiconductor optical amplifiers (SOAs) are essential elements in future large-scale silicon photonic integrated circuits (PICs) to compensate for the excess power penalties that are introduced by ...
Songtao Liu, J. Norman, M. Dumont, D. Jung, A. Torres, A. Gossard, J. Bowers, S. Liu, A. Torres, A. Gossard, J. Bowers, S. Liu, D. Jung, A. Gossard, J. Bowers, J. Norman, M. Dumont, A. Gossard, J. Bowers, D. Jung   +19 more
semanticscholar   +1 more source

All-optical differentiator based on cross-gain modulation in semiconductor optical amplifier

Optics Letters, 2007
A novel scheme for carrying out all-optical intensity differentiation is proposed and demonstrated based on the cross-gain modulation (XGM) in a semiconductor optical amplifier (SOA). Because of the XGM, the mathematical definition of differentiation can be expressed by the combined power of the amplified pump pulse and the delayed modulated probe ...
Jing, Xu, Xinliang, Zhang, Jianji, Dong, Deming, Liu, Dexiu, Huang   +4 more
openaire   +2 more sources

All-optical OR gate using cross gain modulation in semiconductor optical amplifier

CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005., 2004
The reported speed of logic OR with the cascaded SOAs was limited by 2.5 Gbit/s because of relatively slow recovery time. In this paper, an all-optical OR logic gate has been for the first time proposed at 10 Gbit/s by using the XGM of single SOA.
Jae Hun Kim, Byung Chae Kim, Young Tae Byun, Young Min Jhon, Seok Lee, Deok Ha Woo, Sun Ho Kim   +6 more
openaire   +1 more source

Generalized optical gain analysis in nonparabolic semiconductor laser

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2013
SUMMARYA simple generalized theory is developed for optical gain of nonparabolic semiconductor lasers based on the three‐band model of Kane, by taking into account the wave‐vector () dependence of the optical matrix element. The gain in laser of nonparabolic semiconductors is demonstrated, by taking InAs, InSb, Hg1−xCdxTe and In1−xGaxAsyP1−y lattice ...
Anup Dey, Biswajit Maiti, Debasree Chanda (Sarkar)   +2 more
openaire   +1 more source

Gain saturation in traveling-wave semiconductor optical amplifiers

IEEE Journal of Quantum Electronics, 1998
The gain saturation behavior of semiconductor traveling-wave optical amplifiers has been analyzed using a model that includes the specific dependence of gain on carrier concentration. Under the condition of a specific gain at a particular current, it is found that the saturation power strongly depends on the choice between quantum well (QW) or bulk ...
null In Kim, K. Uppal, P.D. Dapkus
openaire   +1 more source

Method for measuring the optical gain in semiconductors

Soviet Journal of Quantum Electronics, 1980
It is shown that a widely used method for measuring the gain in semiconductors, based on the dependence of the radiation intensity on the length of the active region, is incorrect since it neglects the escape of radiation through the surface of the excited region into the passive part of the crystal.
A G Zverev, R F Nabiev, A N Pechenov, Yurii M Popov, S D Skorbun   +4 more
openaire   +1 more source

Efficient Optical Gain in CdSe/CdS Dots-in-Rods

ACS Photonics, 2018
Excitonic-state-resolved pump/probe spectroscopy is performed on semiconductor dot-in-rod nanocrystals.
Colin D. Sonnichsen, T. Kipp, Xiaoyu Tang, P. Kambhampati   +3 more
semanticscholar   +1 more source