Results 341 to 350 of about 308,424 (390)
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Collision broadening of optical gain in semiconductor lasers
Journal of Applied Physics, 1989The energy-dependent intraband relaxation with polar-optical-phonon scattering is incorporated in the calculation of the linear gain and the refractive index change of the GaAs injection laser with an undoped active region. Comparison with the conventional model, which assumes a constant intraband relaxation, shows that it is difficult to fit the ...
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Picosecond gain switching of an organic semiconductor optical amplifier
Applied Physics Letters, 2008All-optical switching of an individual pulse within a sequence of amplified pulses is demonstrated in a conjugated polymer optical amplifier. The switching was achieved using a control pulse resonant with the excited state absorption. An extinction ratio of ∼5.5dB was observed, while the intensities of the remaining pulses in the sequence, spaced at ...
Graham A. Turnbull +4 more
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Efficient Optical Gain in CdSe/CdS Dots-in-Rods
ACS Photonics, 2018Excitonic-state-resolved pump/probe spectroscopy is performed on semiconductor dot-in-rod nanocrystals.
Colin D. Sonnichsen +3 more
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Monolithic Adjustable Gain-Clamped Semiconductor Optical Amplifier
Journal of Lightwave Technology, 2013We report a monolithic adjustable gain-clamped semiconductor optical amplifier (AGC-SOA). The device consists of two tunable gratings and a gain section and enables the gain of the SOA to be regulated without loss of saturated output power. Gain control is achieved by adjusting the wavelength overlap of two Distributed Bragg Reflector gratings ...
Opeoluwa Odedina +4 more
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Nonlinear optical gains in polarization switching of semiconductor lasers
Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 2002We have numerically studied the nonlinear gain coefficients for the optical fields in parallel and orthogonal polarizations in semiconductor lasers by solving the equation of motion for the density matrix in perturbation series. The electronic band structures and the transition matrix elements used in the calculations are obtained by diagonalizing ...
Arup Neogi +2 more
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Integral gain in quantum dot semiconductor optical amplifiers
Superlattices and Microstructures, 2013Abstract In this paper, a new formula of integral gain in quantum dot (QD) semiconductor optical amplifiers (SOAs) depending on the QD states has been derived instead of conventional bulk relation. This formula will pave the way to develop all information in regard to SOA devices.
Amin H. Al-Khursan +2 more
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Gain stabilization of a semiconductor optical amplifier by distributed feedback
IEEE Photonics Technology Letters, 1994The amplifying properties of a distributed feedback (DFB-) laser are investigated at the long wavelength side with respect to its emission wavelength for the first time. A stabilized signal gain is observed up to the 3 dB-saturation output power compared to a semiconductor traveling wave amplifier. In view of an analysis of this gain stabilization, the
B. Bauer, F. Henry, R. Schimpe
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On gain saturation in quantum dot semiconductor optical amplifiers
Optics Communications, 2005We show for quantum dot (QD) semiconductor optical amplifiers (SOAs) operating in the regime where the gain is maximized, that gain saturation due to carrier depletion can be eliminated by increasing the SOA pump current density. At high pump currents, gain saturation in QD SOAs is then due to spectral hole burning.
M. Laemmlin +5 more
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GAIN DYNAMICS AND ASSOCIATED NONLINEARITIES IN SEMICONDUCTOR OPTICAL AMPLIFIERS
International Journal of High Speed Electronics and Systems, 1996A rich variety of dynamical processes underlie the operation of active semiconductor light-emitting devices, such as semiconductor optical amplifiers. These processes include interband and intraband carrier dynamics. Interband processes comprise spontaneous recombination, both radiative and Auger, stimulated radiative recombination, and carrier ...
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Gain saturation in traveling-wave semiconductor optical amplifiers
IEEE Journal of Quantum Electronics, 1998The gain saturation behavior of semiconductor traveling-wave optical amplifiers has been analyzed using a model that includes the specific dependence of gain on carrier concentration. Under the condition of a specific gain at a particular current, it is found that the saturation power strongly depends on the choice between quantum well (QW) or bulk ...
K. Uppal, In Kim, P.D. Dapkus
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