Results 31 to 40 of about 308,424 (390)
Realization of a semiconductor-based cavity soliton laser [PDF]
, 2007 The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported.
F. W. Wise +8 more
core +2 more sources
IEEE Photonics Journal, 2021 We propose an efficient scheme of optical pumping and a compact design of an optically-pumped semiconductor optical amplifier (OP-SOA), with gain characteristics which are qualitatively similar to that of conventional (electrically-pumped) SOA.
Nithin Vogirala, M. Shenoy, Yogesh Kumar
doaj +1 more source
IEEE Journal of Quantum Electronics, 2019 We have performed a systematic experimental and simulation analysis of the optical frequency combs generated by gain-switching single mode laser diodes, either free-running or subjected to optical injection.
A. Rosado +5 more
semanticscholar +1 more source
Detailed Theoretical Model for Adjustable Gain-Clamped Semiconductor Optical Amplifier
International Journal of Optics, 2012 The adjustable gain-clamped semiconductor optical amplifier (AGC-SOA) uses two SOAs in a ring-cavity topology: one to amplify the signal and the other to control the gain.
Lin Liu +3 more
doaj +1 more source
Numerical Modeling of the Emission Characteristics of Semiconductor Quantum Dash Materials for Lasers and Optical Amplifiers [PDF]
, 2004 This paper deals with the simulation of the emission characteristics of self-assembled semiconductor quantum dash (QDash) active materials, characterized by high length-to-width and width-to-height ratios of the dash size and by a wide spreading of the ...
Gioannini, Mariangela
core +1 more source
Semiconductor optical amplifier gain anisotropy: confinement factor against material gain
Electronics Letters, 2004 It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy, Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.
K. Allaart, Wenfeng Wang, Daan Lenstra
openaire +2 more sources
Gain-switched semiconductor laser driven soliton microcombs [PDF]
Nature Communications, 2020 Dissipative Kerr soliton generation using self-injection-locked III-V lasers has enabled fully integrated hybrid microcombs that operate in turnkey mode and can access microwave repetition rates. Yet, continuous-wave-driven soliton microcombs exhibit low
W. Weng +7 more
semanticscholar +1 more source
Practical method for modelling the nonlinear behaviour of a travelling wave semiconductor optical amplifier [PDF]
, 1993 The authors present a simple model of a travelling wave semiconductor optical amplifier with an appreciable degree of saturation. The model uses a particular way of linearising the total carrier recombination R(N) to find useful expressions for the ...
Guitart Felip, Jorge +1 more
core +2 more sources
Controlled fundamental supermode operation of phase-locked arrays of gain-guided diode lasers [PDF]
, 1984 Uniform semiconductor laser arrays tend to oscillate in a superposition of their supermodes, thus leading to large beam divergence and spectral spread. Discrimination among the supermodes in phase-locked arrays is discussed theoretically.
Kapon, E. +3 more
core +1 more source
Observation of gain-pinned dissipative solitons in a microcavity laser
APL Photonics, 2020 We demonstrate an experimental approach for creating spatially localized states in a semiconductor microcavity laser. In particular, we shape the spatial gain profile of a quasi-one-dimensional microcavity laser with a nonresonant, pulsed optical pump to
M. Pieczarka +6 more
doaj +1 more source