Results 161 to 170 of about 139,672 (310)

Semiconductors V. 34, I. 03

, 2000
Semiconductors -- March 2000 Volume 34, Issue 3, pp. 251-369 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Ultrasound-Induced Surface Hardening of Dislocation-Free Silicon I. V. Ostrovskii, L. P. Steblenko, and A. B. Nadtochii

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One‐Dimensional Materials Supported in Two‐Dimensional Van der Waals Metal–Organic Frameworks with Optical Anisotropy Switching via Twist‐Engineering

Advanced Materials, EarlyView.
We introduce a molecular strategy to assemble one‐dimensional (1D) materials into two‐dimensional (2D) van der Waals metal–organic frameworks (MOFs). Crystals of [FeX(pzX)(bpy)] (X = Cl, F) form anisotropic 2D layers that can be mechanically exfoliated into thin sheets.
Eleni C. Mazarakioti, Carla Boix‐Constant, Iván Gómez‐Muñoz, Diego López‐Alcalá, Sergio Revuelta, Marco Ballabio, Vasileios Balos, José J. Baldoví, Enrique Cánovas, Josep Canet‐Ferrer, Guillermo Mínguez Espallargas, Samuel Mañas‐Valero, Eugenio Coronado   +12 more
wiley   +1 more source

Dimensional Scaling Effect in Percolative Oxide Semiconductor Transistors. [PDF]

ACS Nano
Tseng R, Kuo YH, Pan YY, Li ZH, Wang ST, Chen CF, Lo ST, Chan YC, Wu YJ, Chen SC, Kuo CC, Wang CC, Wu CH, Lu WH, Bao X, Thao NTP, Minamitan E, Javey A, Lin CL, Lien DH.   +19 more
europepmc   +1 more source

Semiconductors V. 37, I. 01

, 2003
Semiconductors -- January 2003 Volume 37, Issue 1, pp. 1-118 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Multifrequency Kinks in Multifrequency External Fields M. E. Polyakov pp. 1-5 Full Text: PDF (59 kB) Electrical

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Role of the Recombination Zone in Organic Light‐Emitting Devices

Advanced Materials, EarlyView.
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley   +1 more source

Semiconductors V. 38, I. 01

, 2004
Semiconductors -- January 2004 Volume 38, Issue 1, pp. 1-124 REVIEW Theory of Threshold Characteristics of Semiconductor Quantum Dot Lasers L. V. Asryan and R. A. Suris pp. 1-22 Full Text: PDF (261 kB) ATOMIC STRUCTURE AND NONELECTRONIC

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Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

Advanced Materials, EarlyView.
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng, Peng Zhang, Gang Qiu, Ting‐Hsun Yang, Chang Niu, Yaochen Li, Wenqiang Cui, Yang Feng, Peide D. Ye, Ke He, Kai Chang, Kang L. Wang   +11 more
wiley   +1 more source

Direct resist-free patterning of an organic semiconductor via thermal scanning probe lithography. [PDF]

Discov Nano
Luo K, Li J, Gu Y, Ma T, Zhang J, Cao L, Zhu Z, Tang H, Xu P, Jia H, Tu M, Li X.   +11 more
europepmc   +1 more source

Semiconductor Detectors [PDF]

Science, 1966
T, Hall, H R, Bowman, E K, Hyde
openaire   +2 more sources

Semiconductors V. 37, I. 05

, 2003
Semiconductors -- May 2003 Volume 37, Issue 5, pp. 493-615 REVIEW Artificial GeSi Substrates for Heteroepitaxy: Achievements and Problems Yu. B. Bolkhovityanov, O. P. Pchelyakov, L. V. Sokolov, and S. I. Chikichev pp.

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