Results 211 to 220 of about 570,799 (322)
Advances in Polymeric Semiconductors for Next-Generation Electronic Devices. [PDF]
Lim JW.
europepmc +1 more source
AgCrP2S6 reveals a momentum‐indirect band edge (≈1.35 eV) and chain‐locked linear dichroism: the first direct transitions emerge at 1.6–1.8 eV for E||a. Resonant Raman and photoemission corroborate this assignment. In ACPS/graphene heterostructures, photocurrent turns on above ≈1.5 eV and follows the same polarization selection rules (anisotropy ≈0.53),
Oleksandr Volochanskyi +9 more
wiley +1 more source
Chemical Diffusion at Mixed Ionic Electronic Semiconductor Interfaces and comparison with La2NiO4+d epitaxial thin films [PDF]
Jaume Roqueta +6 more
openalex +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Benchmarking Density Functional Theory for Accurate Calculation of Nitride Band Gaps. [PDF]
Mohn CE +4 more
europepmc +1 more source
Nanoscale‐grooved indium gallium oxide (IGO) semiconductors, patterned via thermal nanoimprint lithography (NIL) using CD/DVD templates, are integrated into electrolyte‐gated transistor biosensors to overcome Debye length limitations. Precisely engineered concave–convex nanostructures modulate local electrostatic potentials, extend the effective Debye ...
Jong Yu Song +5 more
wiley +1 more source
Remarkably High Effective Mobility of 301 cm2/V·s in 3 nm Ultra-Thin-Body SnO2 Transistor by UV Annealing. [PDF]
Shih AC, Zhan YH, Chin A.
europepmc +1 more source
Solution‐processed OLEDs containing discotic liquid‐crystalline MR‐TADF emitters are reported. Supramolecular self‐assembly induces homeotropic columnar alignment, enforcing preferential horizontal orientation of the emitter transition dipole moment in spin‐coated films, which leads to an enhancement in the device light outcoupling efficiency while ...
Joydip De +6 more
wiley +1 more source
Automat optical inspection (AOI) techniques in semiconductor fabrication can be leveraged in battery manufacturing, enabling scalable detection and analysis of electrode‐ and cell‐level imperfections through AI‐driven analytics and a digital‐twin framework.
Jianyu Li, Ertao Hu, Wei Wei, Feifei Shi
wiley +1 more source

