Results 211 to 220 of about 54,518 (263)
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Annual Review of Materials Research, 2006
▪ Abstract Hydrogen strongly affects the properties of electronic materials. Interstitial monatomic hydrogen is always electrically active and usually counteracts the prevailing conductivity of the semiconductor. In some materials, however, hydrogen acts as a source of doping.
Van de Walle, C., Neugebauer, J.
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▪ Abstract Hydrogen strongly affects the properties of electronic materials. Interstitial monatomic hydrogen is always electrically active and usually counteracts the prevailing conductivity of the semiconductor. In some materials, however, hydrogen acts as a source of doping.
Van de Walle, C., Neugebauer, J.
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Proceedings of the IEEE, 1966
This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described.
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This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described.
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Physical Review B, 1981
A detailed study of the electronic structure of a number of (111) vacuum-semiconductor, metal-semiconductor, and semiconductor-semiconductor interfaces has been made by using a cluster-Bethe-lattice method. Numerical calculations for the electronic density of states of Ge, GaAs, and ZnSe surfaces and interfaces have been performed using a realistic ...
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A detailed study of the electronic structure of a number of (111) vacuum-semiconductor, metal-semiconductor, and semiconductor-semiconductor interfaces has been made by using a cluster-Bethe-lattice method. Numerical calculations for the electronic density of states of Ge, GaAs, and ZnSe surfaces and interfaces have been performed using a realistic ...
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Communications of the ACM, 2017
Researchers are looking for new ways to advance semiconductors as Moore's Law approaches its limits.
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Researchers are looking for new ways to advance semiconductors as Moore's Law approaches its limits.
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Semiconductors and Semiconductor Devices and Circuits
2023Active and passive semiconductor devices and circuits have revolutionized our way of living. They are key components in applications such as computing, internet, mobile communication, and sensing. This chapter addresses the main characteristics of the underlying semiconductor materials, devices, and (integrated) circuits suitable for analogue microwave
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Applied Surface Science, 1990
Abstract Electrical characterization reveals several salient common electronic features of insulator-semiconductor (I-S) and semiconductor-semiconductor (S-S) interfaces. Currently available models on the origin of states (defect model, DIGS model, effective workfunction model) are compared in their capabilities of explaining these features. The DIGS
H. Hasegawa +5 more
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Abstract Electrical characterization reveals several salient common electronic features of insulator-semiconductor (I-S) and semiconductor-semiconductor (S-S) interfaces. Currently available models on the origin of states (defect model, DIGS model, effective workfunction model) are compared in their capabilities of explaining these features. The DIGS
H. Hasegawa +5 more
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2009
The modern interest for phenomena at the semiconductor-electrolyte interface dates back to experiments performed in the 1950s with germanium, and has extended to most semiconducting materials for reasons of fundamental knowledge or potential application, going from semiconductor processing technology to heterogeneous photocatalysis to sensors.
Cattarin S., DECKER, Franco
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The modern interest for phenomena at the semiconductor-electrolyte interface dates back to experiments performed in the 1950s with germanium, and has extended to most semiconducting materials for reasons of fundamental knowledge or potential application, going from semiconductor processing technology to heterogeneous photocatalysis to sensors.
Cattarin S., DECKER, Franco
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Applied Optics, 1967
The developments in the field of semiconductor lasers (p-n junction, excited by electron beam and by optical pumping) are considered. Especially emphasized is the problem of the application of the p-n junction laser as a high speed switching element.
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The developments in the field of semiconductor lasers (p-n junction, excited by electron beam and by optical pumping) are considered. Especially emphasized is the problem of the application of the p-n junction laser as a high speed switching element.
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Metal–Semiconductor Junctions and Semiconductor Heterostructures
2001In comparison to the solid-vacuum interface, i.e. the clean, well-defined surface of a solid, other solid interfaces are of much more practical importance. The solid-liquid interface, for example, plays a major role in electrochemistry and biophysics. Studies of that particular interface have a long tradition in physical chemistry. A detailed treatment
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Semiconductor technologies and semiconductor memories
SIMULATION, 1976In this article, we discuss the semiconductor techno logies from which microprocessors are constructed and the semiconductor memories with which microprocessors are commonly used. We will discuss the characteristics of the technologies and memories from the user's point of view and will not discuss either the inner workings or the manufacturing ...
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