Results 241 to 250 of about 139,672 (310)

Designable van der Waals Crystal for Artificial Neuronal Cell Mimicking

Advanced Materials, EarlyView.
Designable van der Waals crystal has been demonstrated for device‐scale neuronal cell mimicking. The structural similarity between ion‐channel in biological membranes and layered vdW lattices is realized with nano‐crystallization via Ar + H2S plasma sulfurization.
Jinhyoung Lee, Gunhyoung Kim, Dongho Lee, Seowoo Son, Hyunho Seok, Sihoon Son, Hyunbin Choi, Geonwook Kim, Geumji Back, Hyunkyu Kim, Chaerin Park, Junmin Ahn, Seongyun Je, Chaeyoung Im, Junil Cho, Magdalena Grzeszczyk, Seongho Kim, Eunseo Go, Hyunwoo Shim, Donghwan Choi, Muyoung Kim, Hyoeng‐U. Kim, Won‐Jun Jang, Taesung Kim   +23 more
wiley   +1 more source

Photoelectrochemical Immuno-Sensing via Plasmon-Induced Resonance Energy Transfer Mechanism. [PDF]

ECS Sens Plus
Bright J, Hang Y, Tan W, Wang A, Yang H, Wu N.   +5 more
europepmc   +1 more source

Tailoring Phonon‐Driven Responses in α‐MoO3 through Isotopic Enrichment

Advanced Materials, EarlyView.
ABSTRACT The implementation of polaritonic materials into nanoscale devices requires selective tuning of parameters to realize desired spectral or thermal responses. One robust material, α‐MoO3, an orthorhombic crystal boasting three distinct phonon dispersions, provides three polaritonic dispersions of hyperbolic phonon polaritons (HPhPs) across the ...
Thiago S. Arnaud, Ryan W. Spangler, Johnathan D. Georgaras, Jonah B. Haber, Daniel Hirt, Maximilian Obst, Gonzalo Álvarez‐Pérez, Mackey Long III, Felix G. Kaps, Jakob Wetzel, Courtney Ragle, John E. Buchner, Youngji Kim, Aditha S. Senarath, Richarda Niemann, Mingze He, Giulia Carini, Unai Arregui‐Leon, Akash C. Behera, Ramachandra Bangari, Nihar Sahoo, Niels C. Brumby, J. Michael Klopf, Martin Wolf, Lukas M. Eng, Susanne C. Kehr, Thomas G. Folland, Alexander Paarmann, Patrick E. Hopkins, Felipe Jornada, Jon‐Paul Maria, Joshua D. Caldwell   +31 more
wiley   +1 more source

Achieving 27.7% Efficiency with a Mechanically Stacked, Four-Terminal Perovskite/InGaAsP Tandem Solar Cell. [PDF]

Small Sci
Gupta B, Duong T, Haggren T, Walter D, Tournet J, Mayon AO, Jagadish C, Tan HH, Karuturi S.   +8 more
europepmc   +1 more source

Linker‐Engineered Dimeric Acceptors Afford Efficient Organic Photocatalytic Hydrogen Evolution via Tailored Nanomorphology for Long‐Lived Charge Accumulation

Advanced Materials, EarlyView.
We developed a new series of monomeric (MY) and dimeric acceptors incorporating unfused (DY1) and fused (DY2) linkers, which establish a controlled self‐aggregation trend of MY > DY2 > DY1. The DY2‐based system yields a bulk‐heterojunction nanoparticle morphology that appears to balance phase separation and interfacial accessibility, consistent with ...
Jin‐Woo Lee, Cheng Sun, Yang Song, Guanru Dong, Keren Ai, Stanley Alfred Cazaly, Flurin Eisner, Bumjoon J. Kim, Zeinab Hamid, Iain McCulloch, Yun‐Hi Kim, James R. Durrant   +11 more
wiley   +1 more source

Double‐Sided Mechanical Interlocking Enables Soft‐Rigid Conductive Interfaces With a Record High Toughness for Flexible Electronics

Advanced Materials, EarlyView.
A double‐sided mechanical interlocking strategy is developed to create robust electrical contact between polymer electrode and metal interconnect. The fibrous structure enables formation of thread–hole adhesion, which only breaks under bulk failure and achieves a record high interfacial energy exceeding 730 J·m−2. This adhesion secures the integrity of
Gang Li, Minkun Cai, Chunyan Cao, Zengbai Ouyang, Hong Fu, Lingyu Zhao, Bingang Xu   +6 more
wiley   +1 more source

Advancing flexible optoelectronics with III-nitride semiconductors: from materials to applications. [PDF]

Light Sci Appl
Gao X, Huang Y, Wang R, Sun Y, Wang L.
europepmc   +1 more source

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

Advanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang, Soohyeon Kim, Tony Chiang, Megan K. Lenox, Ian Mercer, John J. Plombon, Jon‐Paul Maria, Jon F. Ihlefeld, Wenhao Sun, Wei Lu, John T. Heron   +10 more
wiley   +1 more source

Generic logic block based on bias-gated 2D MoS₂ transistors. [PDF]

Nat Commun
Wei X, Chen Z, Chen K, Shang J, Gao L, Jiang H, Yu H, Hong M, Zhang X, Zhang Z, Zhang Y.   +10 more
europepmc   +1 more source