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Nanostructured Semiconductors for Flexible Thermoelectric Applications. [PDF]
Nanomaterials (Basel)Luo Y, Yu C, Niu Y, Guo H, Feng X.
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Flexible n-Channel Organic Transistors with Low Contact Resistance. [PDF]
ACS Appl Mater InterfacesSteffens S +10 more
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Effect of Exchange-Correlation Functionals on Schottky Barriers at Si/Metal Interfaces. [PDF]
J Phys Chem C Nanomater InterfacesDovale-Farelo V, Choudhary K.
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Diverse Responses in Lattice Thermal Conductivity of n-Type/p-Type Wurtzite Semiconductors Driven by Asymmetric Electron-Phonon Interactions. [PDF]
Adv Sci (Weinh)Sun J +11 more
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Spintronics with Semiconductors
2004 International Conference on MEMS, NANO and Smart Systems (ICMENS'04), 2004While today's semiconductor electronics is based on the manipulation of electron charge, "spintronics" uses spin for extended functionality. Semiconductor spintronics is still in its infancy, in contrast to metallic magnetoelectronics, which e.g. is present in all modern reader heads of computer hard disks.
Daniel Hägele +3 more
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Applied Surface Science, 1990
Abstract Electrical characterization reveals several salient common electronic features of insulator-semiconductor (I-S) and semiconductor-semiconductor (S-S) interfaces. Currently available models on the origin of states (defect model, DIGS model, effective workfunction model) are compared in their capabilities of explaining these features. The DIGS
H. Hasegawa +5 more
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Abstract Electrical characterization reveals several salient common electronic features of insulator-semiconductor (I-S) and semiconductor-semiconductor (S-S) interfaces. Currently available models on the origin of states (defect model, DIGS model, effective workfunction model) are compared in their capabilities of explaining these features. The DIGS
H. Hasegawa +5 more
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Proceedings of the IEEE, 1966
This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described.
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This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described.
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Annual Review of Materials Research, 2006
▪ Abstract Hydrogen strongly affects the properties of electronic materials. Interstitial monatomic hydrogen is always electrically active and usually counteracts the prevailing conductivity of the semiconductor. In some materials, however, hydrogen acts as a source of doping.
Van de Walle, C., Neugebauer, J.
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▪ Abstract Hydrogen strongly affects the properties of electronic materials. Interstitial monatomic hydrogen is always electrically active and usually counteracts the prevailing conductivity of the semiconductor. In some materials, however, hydrogen acts as a source of doping.
Van de Walle, C., Neugebauer, J.
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