Results 181 to 190 of about 110,687 (287)

BOAR SEMINAL PLASMA PROTEINS [PDF]

open access: yesReproduction, 1968
J. C. BOURSNELL   +2 more
openaire   +1 more source

Deterministic hBN Bubbles as a Versatile Platform for Studies on Single‐Photon Emitters

open access: yesAdvanced Functional Materials, EarlyView.
Single‐photon emitters (SPEs) in hBN are promising for quantum technologies; however, in exfoliated samples their activation is required, limiting reproducibility of previous studies. This work introduces a large‐area MOVPE‐grown hBN platform that hosts SPEs without prior activation.
Piotr Tatarczak   +8 more
wiley   +1 more source

From Mechanics to Electronics: Influence of ALD Interlayers on the Multiaxial Electro‐Mechanical Behavior of Metal–Oxide Bilayers

open access: yesAdvanced Functional Materials, EarlyView.
Ultrathin AlOxHy interlayers between aluminum films and polymer substrates significantly improve electro‐mechanical properties of flexible thin film systems. By precisely controlling interlayer thickness using atomic layer deposition, this study identifies an optimal interlayer thickness of 5–10 nm that enhances ductility and delays cracking.
Johanna Byloff   +9 more
wiley   +1 more source

Developmental competence of alpaca oocytes matured <i>in vivo</i> with seminal plasma and following additional <i>in vitro</i> maturation. [PDF]

open access: yesAnim Reprod
Silva Huanca NM   +4 more
europepmc   +1 more source

Structure, Biochemistry and Comparative Aspects of Mammalian Seminal Plasma Acrosin Inhibitors [PDF]

open access: yes, 1976
Fink, Edwin   +5 more
core  

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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