Results 141 to 150 of about 16,380 (261)
A nanoporous SiO2 memristor enabling reconfigurable volatile and non‐volatile switching within a single device is demonstrated. The dual‐mode functionality supports both physical reservoir dynamics and synaptic weight storage, allowing unified hardware implementation of reservoir computing for temporal information processing, including image and ...
Bohao Ding +5 more
wiley +1 more source
A High-Performance Ultraviolet Optical Sensing System for Rotating Detonation Extreme Combustion. [PDF]
Dai W +7 more
europepmc +1 more source
Employing a digital single‐molecule activity tracker (dSMAT), this research demonstrates that high‐photon‐flux irradiation drives progressive oxidative scarring in polymerases. Unlike simple thermal denaturation, real‐time kinetic tracking dynamically visualizes enzymes degrading into multiple impaired subpopulations.
Anran Zheng +11 more
wiley +1 more source
Compression-Efficient Feature Extraction Method for a CMOS Image Sensor. [PDF]
Kuroda K +6 more
europepmc +1 more source
A self‐assembled monolayer (≈0.9 nm) of an axially chiral binaphthol phosphoric acid derivative on a ferromagnetic Ni/NiOx substrate shows chiral‐induced spin selectivity (CISS) magnetoresistance of 50%–80%. This thermally and chemically robust functional stack shows the way towards practical spintronic devices based on the CISS effect.
Abin Nas Nalakath +8 more
wiley +1 more source
Rapid detection and quantification of glyphosate in water using a handheld portable biosensor. [PDF]
Stroia A +8 more
europepmc +1 more source
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu +11 more
wiley +1 more source
Comprehensive Comparison of Front- and Back-Illuminated Single-Photon Avalanche Diodes in 110 nm Standard CMOS Image Sensor Technology. [PDF]
Eom D +6 more
europepmc +1 more source
Our research elucidates the systematic evolution of the microstructure and optoelectronic properties of n‐a‐Si:H governed by the phosphine dilution ratio. Optimally phosphorus‐doped n‐a‐Si:H is integrated with Te to form a flexible heterojunction, enabling high‐performance near‐infrared photodetectors.
Kyeong‐jin Hyun +7 more
wiley +1 more source

