Results 241 to 250 of about 91,235 (304)
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IEEE Circuits and Devices Magazine, 2005
In this article, we provide a basic introduction to CMOS image-sensor technology, design and performance limits and present recent developments and future directions in this area. We also discuss image-sensor operation and describe the most popular CMOS image-sensor architectures. We note the main non-idealities that limit CMOS image sensor performance,
A. El Gamal, H. Eltoukhy
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In this article, we provide a basic introduction to CMOS image-sensor technology, design and performance limits and present recent developments and future directions in this area. We also discuss image-sensor operation and describe the most popular CMOS image-sensor architectures. We note the main non-idealities that limit CMOS image sensor performance,
A. El Gamal, H. Eltoukhy
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2017 New Generation of CAS (NGCAS), 2017
In this paper, we present a novel event-driven Dynamic Tactile Sensor (DTS) for artificial devices. The sensor is based on the POSFET (Piezoelectric-Oxide-Semiconductor-Field-Effect-Transistor) as the tactile sensing device with the change detector (CD) circuit of the DVS (Dynamic Vision Sensor) [1] as a readout circuit.
Khalil A. A. +3 more
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In this paper, we present a novel event-driven Dynamic Tactile Sensor (DTS) for artificial devices. The sensor is based on the POSFET (Piezoelectric-Oxide-Semiconductor-Field-Effect-Transistor) as the tactile sensing device with the change detector (CD) circuit of the DVS (Dynamic Vision Sensor) [1] as a readout circuit.
Khalil A. A. +3 more
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CMOS image sensors for sensor networks
Analog Integrated Circuits and Signal Processing, 2006We report on two generations of CMOS image sensors with digital output fabricated in a 0.6 ?m CMOS process. The imagers embed an ALOHA MAC interface for unfettered self-timed pixel read-out targeted to energy-aware sensor network applications. Collision on the output is monitored using contention detector circuits.
Eugenio Culurciello, Andreas G. Andreou
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SPIE Proceedings, 2009
A new breed of CMOS color sensor called MonoColor sensor is developed for a barcode reading application in AIDC industry. The RGBW color filter array (CFA) in a MonoColor sensor is arranged in a 8 x 8 pixels CFA with only 4 pixels of them are color (RGB) pixels and the rest of 60 pixels are transparent or monochrome.
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A new breed of CMOS color sensor called MonoColor sensor is developed for a barcode reading application in AIDC industry. The RGBW color filter array (CFA) in a MonoColor sensor is arranged in a 8 x 8 pixels CFA with only 4 pixels of them are color (RGB) pixels and the rest of 60 pixels are transparent or monochrome.
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SPIE Proceedings, 1997
A family of analog CMOS velocity sensors is described which measures the velocity of a moving edge by computing its time of travel between adjacent pixels. These sensors are compact, largely invariant to illumination over a wide range, sensitive to edges with very low contrast, and responsive to several orders of magnitude of velocity.
Charles M. Higgins, Christof Koch
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A family of analog CMOS velocity sensors is described which measures the velocity of a moving edge by computing its time of travel between adjacent pixels. These sensors are compact, largely invariant to illumination over a wide range, sensitive to edges with very low contrast, and responsive to several orders of magnitude of velocity.
Charles M. Higgins, Christof Koch
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2009 2nd International Workshop on Electron Devices and Semiconductor Technology, 2009
We present a low power gas sensor system on CMOS platform consisting of micromachined polysilicon microheater, temperature controller circuit, resistance readout circuit and SnO 2 transducer film. The design criteria for different building blocks of the system is elaborated.
Navakanta Bhat +4 more
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We present a low power gas sensor system on CMOS platform consisting of micromachined polysilicon microheater, temperature controller circuit, resistance readout circuit and SnO 2 transducer film. The design criteria for different building blocks of the system is elaborated.
Navakanta Bhat +4 more
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IEEE Sensors, 2005., 2006
This paper provides an overview of CMOS-based sensor technology with specific attention placed on devices made through micromachining of CMOS substrates and thin films. Microstructures may be formed using either pre-CMOS, intra-CMOS and post-CMOS fabrication approaches.
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This paper provides an overview of CMOS-based sensor technology with specific attention placed on devices made through micromachining of CMOS substrates and thin films. Microstructures may be formed using either pre-CMOS, intra-CMOS and post-CMOS fabrication approaches.
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Proceedings of the 2004 11th IEEE International Conference on Electronics, Circuits and Systems, 2004. ICECS 2004., 2005
Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from ...
I. Brouk, Y. Nemirovsky
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Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from ...
I. Brouk, Y. Nemirovsky
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CMOS integrated infrared sensor
Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97), 2002CMOS integrated microsensors (CIMS) technology has been developed that combines bulk micromachining, pyroelectric materials and a commercial CMOS process to provide an integrated infrared sensor. This sensor system is based on a new sol-gel derived thin film fabricated on thin silicon micro electromechanical structure.
D.T. Chang +4 more
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