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Sensors and Actuators A: Physical, 1998
Sensor systems based on CMOS technology benefit not only from capability of silicon to realize both, sensing and electronic functions, but also from the manufacturing maturity that the CMOS technology has reached so far. In this contribution we discuss some of the important issues of the CMOS sensor system design, such as available technologies and ...
exaly +3 more sources
Sensor systems based on CMOS technology benefit not only from capability of silicon to realize both, sensing and electronic functions, but also from the manufacturing maturity that the CMOS technology has reached so far. In this contribution we discuss some of the important issues of the CMOS sensor system design, such as available technologies and ...
exaly +3 more sources
2017 New Generation of CAS (NGCAS), 2017
In this paper, we present a novel event-driven Dynamic Tactile Sensor (DTS) for artificial devices. The sensor is based on the POSFET (Piezoelectric-Oxide-Semiconductor-Field-Effect-Transistor) as the tactile sensing device with the change detector (CD) circuit of the DVS (Dynamic Vision Sensor) [1] as a readout circuit.
Khalil A. A. +3 more
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In this paper, we present a novel event-driven Dynamic Tactile Sensor (DTS) for artificial devices. The sensor is based on the POSFET (Piezoelectric-Oxide-Semiconductor-Field-Effect-Transistor) as the tactile sensing device with the change detector (CD) circuit of the DVS (Dynamic Vision Sensor) [1] as a readout circuit.
Khalil A. A. +3 more
openaire +1 more source
Proceedings of the 2004 11th IEEE International Conference on Electronics, Circuits and Systems, 2004. ICECS 2004., 2005
Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from ...
Igor Brouk, Yael Nemirovsky
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Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from ...
Igor Brouk, Yael Nemirovsky
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A CMOS Temperature Sensor Circuit
IEICE Transactions on Electronics, 2007A supply voltage (V DD ) independent temperature sensor circuit, which can be realized by the optimum combination of three current modes of n-MOSFETs including the subthreshold current using the feedback scheme from the temperature dependent voltage (V TD ) output to the gates of three n-MOSFETs, was proposed and fabricated by a standard 1.2μm n-well ...
Takashi Ohzone +5 more
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