Results 71 to 80 of about 79,818 (287)

The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control [PDF]

open access: yes, 1994
Very deep trenches (up to 200 µm) with high aspect ratios (up to 10) in silicon and polymers are etched using a fluorine-based plasma (SF6/O2/CHF3). Isotropic, positively and negatively (i.e.
de Boer, Meint J.   +4 more
core   +4 more sources

Dissolution Study of Biodegradable Magnesium Silicide Thin Films for Transient Electronic Applications

open access: yesAdvanced Science, EarlyView.
Magnesium silicide (Mg2Si) is introduced as a narrow‐bandgap, biodegradable semiconductor for transient electronics. RF‐sputtered and annealed Mg2Si thin films show high intrinsic electrical conductivity and low thermal conductivity. The polycrystalline material undergoes hydrolysis in aquatic and composting environments with minimal cytotoxicity ...
Ji‐Woo Gu   +17 more
wiley   +1 more source

Evaluation of SF6 Leakage from Gas Insulated Equipment on Electricity Networks in Great Britain

open access: yesEnergies, 2018
This paper examines the data collected from the power industry over the last six years of actual reported emissions of sulphur hexafluoride (SF6) and the potential impact.
Phillip Widger   +1 more
doaj   +1 more source

Quantum Hydrodynamic Model for the enhanced moments of Inertia of molecules in Helium Nanodroplets: Application to SF$_6$ [PDF]

open access: yes, 2001
The increase in moment of inertia of SF$_6$ in helium nanodroplets is calculated using the quantum hydrodynamic approach. This required an extension of the numerical solution to the hydrodynamic equation to three explicit dimensions.
Carlo Callegari   +2 more
core   +2 more sources

Wafer Scale III‐Nitride Deep‐Ultraviolet Vertical‐Cavity Surface‐Emitting Lasers Featuring Nanometer‐Class Control of Cavity Length

open access: yesAdvanced Science, EarlyView.
A DUV‐VCSEL strategy featuring the nanometer‐class control of the cavity length is proposed in the DUV optoelectronic framework based on GaN templates. After the sapphire removal, a self‐terminated etching technology is developed, whereby the cavity length can be accurately determined by epitaxy instead of the fabrication process. As such, a record low
Chen Ji   +18 more
wiley   +1 more source

Diffusion principles of SF6 tracer gas: constraints on SF6 mixing distance in mine tunnels

open access: yesScientific Reports
Mine wind measurement work is an important task to ensure the normal operation of mine production and environmental safety. The traditional wind measurement method uses the average wind speed and average cross-sectional area of the tunnel to calculate ...
Fang Xu, Jian Liu, Dong Wang, Xue Liu
doaj   +1 more source

Investigation of insulation properties and synergistic effects in CF3I/N2 gas mixtures using the Boltzmann equation [PDF]

open access: yesAIP Advances
CF3I is regarded as a highly promising substitute for SF6; however, due to its high boiling point, buffer gases such as N2 must be blended. To evaluate the feasibility of replacing SF6 and its mixtures with CF3I/N2, a comparative analysis was conducted ...
Ziyuan Wang   +4 more
doaj   +1 more source

The late-time development of the Richtmyer–Meshkov instability [PDF]

open access: yes, 2000
Measurements have been made of the growth by the Richtmyer–Meshkov instability of nominally single-scale perturbations on an air/sulfur hexafluoride (SF6) interface in a large shock tube.
Kumar, S.   +3 more
core   +1 more source

Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications

open access: yesAdvanced Intelligent Systems, EarlyView.
A charge‐domain ternary content‐addressable memory using one capacitor one nanoelectromechanical memory switch (1C‐1N TCAM) is proposed for energy‐efficient, high‐reliability computations. Integrated with the back‐end‐of‐line process, the 1C‐1N TCAM leverages the air gap capacitance to achieve a high capacitance ratio and ternary functionality.
Jin Wook Lee   +5 more
wiley   +1 more source

QUALITY ASSESSMENT OF SF6 INSULATION AT WARU 150 KV GIS COMPARTMENT USING PARTIAL DISCHARGE ION MOBILITY SPECTROMETER

open access: yesMajalah Ilmiah Teknologi Elektro, 2009
Almost all of modern gas insulated switchgears (GIS) use sulphur hexafluoride (SF6) as insulation material. Therefore, GIS quality much or less depends on quality of its SF6. Failure however can arise within operation of SF6 GIS due to quality decline of
Yulistya Negara   +2 more
doaj  

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