Results 91 to 100 of about 3,667,763 (282)
Depth dependence of nanohardness in a CuAlNi single crystal shape memory alloy
Instrumented nanoindentation was employed to study the depth dependence of nanohardness in a CuAlNi single crystal shape memory alloy that exhibits shape memory effect (SME).
Sun QP(孙庆平) +2 more
core +2 more sources
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad +3 more
wiley +1 more source
The structural model of the thin-walled laminated beams with integral shape memory alloy active fibers and accounting for geometrically nonlinear is presented in this article.
Yongsheng Ren, Shuangshuang Sun
doaj +1 more source
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park +12 more
wiley +1 more source
Development of a Shape-Memory-Alloy-Based Overheating Protection System
Shape Memory Alloys (SMAs) are a class of metallic alloys that have the ability to return to their original shape after being deformed. NiTi (nickel–titanium) alloy a type of shape memory alloy that possesses unique properties such as remembering its ...
Arun Anbalagan +6 more
doaj +1 more source
Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig +3 more
wiley +1 more source
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam +10 more
wiley +1 more source
Energy-Minimizing Microstructures in Multiphase Elastic Solids [PDF]
This thesis concerns problems of microstructure and its macroscopic consequences in multiphase elastic solids, both single crystals and polycrystals. The elastic energy of a two-phase solid is a function of its microstructure.
Chenchiah, Isaac Vikram
core +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
A dynamically actuated reconfigurable topographical surface (DARTS) integrates contact‐mediated bactericidal nanotopography with programmable mechanical actuation to actively disrupt bacterial biofilms. Dynamic surface reconfiguration enhances bacterial killing and suppresses implant‐associated infections in vivo, providing a new strategy for active ...
Mohammad Asadi Tokmedash +4 more
wiley +1 more source

