Results 91 to 100 of about 29,154 (298)

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

open access: yesAdvanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben   +6 more
wiley   +1 more source

Supramolecular shape memory hydrogels: a new bridge between stimuli-responsive polymers and supramolecular chemistry [PDF]

open access: yes, 2017
Supramolecular shape memory hydrogels (SSMHs) refer to shape memory polymers, in which temporary shapes are stabilized by reversible crosslinks such as supramolecular interactions and dynamic covalent bonds.
Huang, Youju   +4 more
core  

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu   +7 more
wiley   +1 more source

Applications of Shape Memory Polymers in Kinetic Buildings

open access: yesAdvances in Materials Science and Engineering, 2018
Shape memory polymers (SMPs) have attracted significant attention from both industrial and academic researchers, due to their useful and fascinating functionality. One of the most common and studied external stimuli for SMPs is temperature; other stimuli
Jing Li   +3 more
doaj   +1 more source

Three‐Dimensional Anomalous Hall Sensing Enabled By Spin–Orbit Torque Driven Domain Reconfiguration In Chiral Multilayers

open access: yesAdvanced Functional Materials, EarlyView.
A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan   +16 more
wiley   +1 more source

The study of active disassembly by using shape memory polymers [PDF]

open access: yes, 2018
With the increasing amount and diversity of electric products and the need for recycling and remanufacturing products, a generic, efficient disassembly method becomes necessary.
Chen, Jingfan
core  

PVDF-Based Shape Memory Polymers [PDF]

open access: yes, 2019
PVDF based graft copolymer was synthesized.
Acar, M (via Mendeley Data)
core   +1 more source

4D printing of high-performance shape memory polymer with double covalent adaptive networks

open access: yesAdvanced Industrial and Engineering Polymer Research
Achieving 4D printing of shape memory polymers with both high strength and high transition temperature remains challenging due to the inherent incompatibility between the rigid molecular structure required for high strength and the molecular structure ...
Zhangzhang Tang   +9 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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