Results 161 to 170 of about 73,903 (291)
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane +9 more
wiley +1 more source
Smart scaffolds: shape memory polymers (SMPs) in tissue engineering. [PDF]
Pfau MR, Grunlan MA.
europepmc +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Advanced Design Concepts for Shape-Memory Polymers in Biomedical Applications and Soft Robotics. [PDF]
Fetisova AA, Surmeneva MA, Surmenev RA.
europepmc +1 more source
Expandable Drug Delivery Systems Based on Shape Memory Polymers: Impact of Film Coating on Mechanical Properties and Release and Recovery Performance. [PDF]
Uboldi M +10 more
europepmc +1 more source
Reprogrammable multi‐material smart textiles knitted from liquid crystal elastomer fibers undergo 2D and 3D deformation under thermal and photo stimuli. Circularly knitted tubular structures reversibly contract in radial and axial directions, enabling autonomous climbing, liquid release, and micro pumping.
Xue Wan +8 more
wiley +1 more source
Four-Dimensional Printing of Shape Memory Polymers for Biomedical Applications: Advances in DLP and SLA Manufacturing. [PDF]
Pittala RK +4 more
europepmc +1 more source
A review of shape memory polymers based on the intrinsic structures of their responsive switches. [PDF]
Yang L, Lou J, Yuan J, Deng J.
europepmc +1 more source
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav +6 more
wiley +1 more source

