Results 161 to 170 of about 3,735,343 (253)

Breaking Bottlenecks in Solid Electrolyte Discovery With Large Artificial Intelligence Models

open access: yesAdvanced Materials, EarlyView.
Large AI models are presented as a route to break key bottlenecks in solid electrolyte discovery by linking materials databases, machine‐learning interatomic potentials, large language models, and autonomous experiments. This perspective highlights how AI can accelerate the identification of solid electrolytes with fast ion transport, stable interfaces,
Eric Jianfeng Cheng   +24 more
wiley   +1 more source

Pd2 MnGa Metamagnetic Shape Memory Alloy with Small Energy Loss. [PDF]

open access: yesAdv Sci (Weinh), 2023
Ito T   +8 more
europepmc   +1 more source

A Critical Call for Mechanistic Investigations of Metal‐Bacteria Interactions

open access: yesAdvanced Materials, EarlyView.
It is well established that the antibacterial properties of metals have tremendous importance for bioengineering applications. What is not as appreciated, however, is the reproducibility crisis in this field's vast literature. In this perspective, we highlight this reproducibility problem, discuss its sources, and suggest solutions towards focused ...
J. Rackwitz   +9 more
wiley   +1 more source

A lightweight shape-memory alloy with superior temperature-fluctuation resistance. [PDF]

open access: yesNature
Song Y   +13 more
europepmc   +1 more source

Advances in Bio‐Integrated Edge Computing Systems for Smart and Connected Health

open access: yesAdvanced Materials, EarlyView.
This review explores advances in bio‐integrated edge computing for healthcare, focusing on co‐designing computing, sensing, and energy strategies to overcome integration and power challenges for optimized, decentralized operation. ABSTRACT Recent advances in bio‐integrated healthcare technologies have enabled continuous, high‐resolution monitoring and ...
Gyuwon Kim   +4 more
wiley   +1 more source

Thickness‐Defined Transport Regime Toward Near‐Ideal Area‐Type Switching

open access: yesAdvanced Materials, EarlyView.
By thinning the oxide layer, memristors pass from diode‐like and battery‐effect‐dominated behavior toward eventual short‐circuit failure. Within the intermediate 5–6 nm window, they reach a near‐ideal analog area‐type switching regime, featuring symmetric hysteresis, area‐dependent conductance, and continuous linear programming of HRS and LRS with ...
Cuo Wu   +12 more
wiley   +1 more source

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